Mechanical and Electrical Reliability Analysis of Flexible Si Complementary Metal-Oxide-Semiconductor Integrated Circuit

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A flexible Si complementary metal-oxide-semiconductor (CMOS) integrated circuit (IC) with multi-level interconnects is realized by thinning down and transferring the CMOS IC onto a polymer substrate. A detailed mechanical and electrical reliability analysis of the flexible Si CMOS IC is carried out in relation to the neutral mechanical plane (NMP) that is extracted from both analytical and numerical modeling. To enhance the reliability by optimizing the NMP position, the thicknesses of all the layers in the CMOS IC on the polymer substrate are carefully adjusted. The NMP-optimized flexible Si CMOS IC maintains its mechanical and electrical stability even at a 5-mm radius bending condition. In addition, to explore the degradation mechanism of the flexible Si CMOS IC, the change of the interface state density of the flexible Si CMOS at different bending conditions is investigated using the charge pumping method. Finally, the long-term electrical reliability of this flexible Si CMOS IC is also investigated.
Publisher
American Scientific Publishers
Issue Date
2019-10
Language
English
Article Type
Article
Citation

Journal of Nanoscience and Nanotechnology, v.19, no.10, pp.6473 - 6480

ISSN
1533-4880
DOI
10.1166/jnn.2019.17066
URI
http://hdl.handle.net/10203/262586
Appears in Collection
ME-Journal Papers(저널논문)EE-Journal Papers(저널논문)
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