Fluorine Effects Originating from the CVD W Process on Charge-Trap Flash Memory Cells

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The fluorine (F) effect originating from the chemical vapor deposited (CVD) tungsten (W) process on charge-trap flash memory devices was systematically investigated, and the CVD-W memory was compared with physical vapor deposited (PVD) W memory. The residual F in the CVD-W diffused into Al 2 O 3 and Si 3 N 4 layers, generating shallow charge-trapping sites in each layer. These generated charge-trapping sites were considered to be responsible for the fast-erase and poor-retention characteristics at room temperature in the CVD-W compared to the related characteristics in the PVD-W memory. The generation of charge-trapping sites caused by the residual F in each layer was also supported by the trap density calculation in the Si 3 N 4 and constant current stress test for the Al 2 O 3 layer.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2019-01
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.1, pp.378 - 382

ISSN
0018-9383
DOI
10.1109/TED.2018.2873693
URI
http://hdl.handle.net/10203/250123
Appears in Collection
EE-Journal Papers(저널논문)
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