DC Field | Value | Language |
---|---|---|
dc.contributor.author | Moon, Jung Min | ko |
dc.contributor.author | Lee, Tae Yoon | ko |
dc.contributor.author | Ahn, Hyunjun | ko |
dc.contributor.author | Lee, Tae In | ko |
dc.contributor.author | Hwang, Wan Sik | ko |
dc.contributor.author | Cho, Byung-Jin | ko |
dc.date.accessioned | 2019-01-23T06:55:06Z | - |
dc.date.available | 2019-01-23T06:55:06Z | - |
dc.date.created | 2018-11-28 | - |
dc.date.created | 2018-11-28 | - |
dc.date.created | 2018-11-28 | - |
dc.date.created | 2018-11-28 | - |
dc.date.created | 2018-11-28 | - |
dc.date.issued | 2019-01 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.1, pp.378 - 382 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/250123 | - |
dc.description.abstract | The fluorine (F) effect originating from the chemical vapor deposited (CVD) tungsten (W) process on charge-trap flash memory devices was systematically investigated, and the CVD-W memory was compared with physical vapor deposited (PVD) W memory. The residual F in the CVD-W diffused into Al 2 O 3 and Si 3 N 4 layers, generating shallow charge-trapping sites in each layer. These generated charge-trapping sites were considered to be responsible for the fast-erase and poor-retention characteristics at room temperature in the CVD-W compared to the related characteristics in the PVD-W memory. The generation of charge-trapping sites caused by the residual F in each layer was also supported by the trap density calculation in the Si 3 N 4 and constant current stress test for the Al 2 O 3 layer. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Fluorine Effects Originating from the CVD W Process on Charge-Trap Flash Memory Cells | - |
dc.type | Article | - |
dc.identifier.wosid | 000454333500048 | - |
dc.identifier.scopusid | 2-s2.0-85056743641 | - |
dc.type.rims | ART | - |
dc.citation.volume | 66 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 378 | - |
dc.citation.endingpage | 382 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2018.2873693 | - |
dc.contributor.localauthor | Cho, Byung-Jin | - |
dc.contributor.nonIdAuthor | Lee, Tae Yoon | - |
dc.contributor.nonIdAuthor | Hwang, Wan Sik | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Blocking oxide (BO) | - |
dc.subject.keywordAuthor | charge retention | - |
dc.subject.keywordAuthor | charge-trap flash (CTF) | - |
dc.subject.keywordAuthor | charge-trapping layer (CTL) | - |
dc.subject.keywordAuthor | chemical vapor deposition (CVD) | - |
dc.subject.keywordAuthor | fluorine (F) | - |
dc.subject.keywordAuthor | gate electrode | - |
dc.subject.keywordAuthor | memory device | - |
dc.subject.keywordAuthor | program/erase (P/E) speed | - |
dc.subject.keywordAuthor | shallow-level electron-trapping | - |
dc.subject.keywordAuthor | tungsten (W) | - |
dc.subject.keywordAuthor | tunnel oxide (TO) | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | WF6 | - |
dc.subject.keywordPlus | RELIABILITY | - |
dc.subject.keywordPlus | IMPROVEMENT | - |
dc.subject.keywordPlus | NUCLEATION | - |
dc.subject.keywordPlus | TIN | - |
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