Vertical-Tunnel Field-Effect Transistor Based on a Silicon–MoS2 Three-Dimensional–Two-Dimensional Heterostructure

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We present a tunneling field-effect transistor based on a vertical heterostructure of highly p-doped silicon and n-type MoS2. The resulting p-n heterojunction shows a staggered band alignment in which the quantum mechanical band-to-band tunneling probability is enhanced. The device functions in both tunneling transistor and conventional transistor modes, depending on whether the p-n junction is forward or reverse biased, and exhibits a minimum subthreshold swing of 15 mV/dec, an average of 77 mV/dec for four decades of the drain current, a high on/off current ratio of approximately 107 at a drain voltage of 1 V, and fully suppressed ambipolar behavior. Furthermore, low-temperature electrical measurements demonstrated that both trap-assisted and band-to-band tunneling contribute to the drain current. The presence of traps was attributed to defects within the interfacial oxide between silicon and MoS2. © 2018 American Chemical Society.
Publisher
AMER CHEMICAL SOC
Issue Date
2018-11
Language
English
Article Type
Article
Citation

ACS APPLIED MATERIALS & INTERFACES, v.10, no.46, pp.40212 - 40218

ISSN
1944-8244
DOI
10.1021/acsami.8b11396
URI
http://hdl.handle.net/10203/248746
Appears in Collection
EE-Journal Papers(저널논문)
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