Oxide Heterostructure Resistive Memory

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Resistive switching devices are widely believed as a promising candidate for future memory and logic applications. Here we show that by using multilayer oxide heterostructures the switching characteristics can be systematically controlled, ranging from unipolar switching to complementary switching and bipolar switching with linear and nonlinear on-states and high endurance. Each layer can be tailed for a specific function during resistance switching, thus greatly improving the degree of control and flexibility for optimized device performance.
Publisher
AMER CHEMICAL SOC
Issue Date
2013-06
Language
English
Article Type
Article
Citation

NANO LETTERS, v.13, no.6, pp.2908 - 2915

ISSN
1530-6984
DOI
10.1021/nl401287w
URI
http://hdl.handle.net/10203/247688
Appears in Collection
EE-Journal Papers(저널논문)
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