QUANTUM-WELL DOPED P-CHANNEL ALGAAS/GAAS0.85SB0.15/GAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS

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We report the first quantum-well doped p-channel AlGaAs/GaAs0.85Sb0.15/GaAs Heterostructure Field-Effect Transistor (HFET's) with 50-mu-m gate length and 400-mu-m gate width. Using a simple analytical model, we obtain accurate values of the low-field hole mobility, threshold voltage, parameters characterizing the gate leakage current, and the saturation currents and voltages. The calculation results are in good agreement with the experimental data.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1991-03
Language
English
Article Type
Note
Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.38, no.3, pp.672 - 674

ISSN
0018-9383
URI
http://hdl.handle.net/10203/24662
Appears in Collection
EE-Journal Papers(저널논문)
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