QUANTUM-WELL DOPED P-CHANNEL ALGAAS/GAAS0.85SB0.15/GAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS

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dc.contributor.authorBYUN, YHko
dc.contributor.authorSCHUERMEYER, FLko
dc.contributor.authorLee, Kwyroko
dc.contributor.authorSHUR, Mko
dc.contributor.authorCOOK, Pko
dc.contributor.authorMARTINEZ, Eko
dc.contributor.authorMARTINEZ, EJko
dc.contributor.authorEVANS, Kko
dc.contributor.authorSTUTZ, CEko
dc.date.accessioned2011-07-20T07:27:27Z-
dc.date.available2011-07-20T07:27:27Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1991-03-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.38, no.3, pp.672 - 674-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/24662-
dc.description.abstractWe report the first quantum-well doped p-channel AlGaAs/GaAs0.85Sb0.15/GaAs Heterostructure Field-Effect Transistor (HFET's) with 50-mu-m gate length and 400-mu-m gate width. Using a simple analytical model, we obtain accurate values of the low-field hole mobility, threshold voltage, parameters characterizing the gate leakage current, and the saturation currents and voltages. The calculation results are in good agreement with the experimental data.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleQUANTUM-WELL DOPED P-CHANNEL ALGAAS/GAAS0.85SB0.15/GAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS-
dc.typeArticle-
dc.identifier.wosidA1991EY64700032-
dc.identifier.scopusid2-s2.0-0026116328-
dc.type.rimsART-
dc.citation.volume38-
dc.citation.issue3-
dc.citation.beginningpage672-
dc.citation.endingpage674-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Kwyro-
dc.contributor.nonIdAuthorBYUN, YH-
dc.contributor.nonIdAuthorSCHUERMEYER, FL-
dc.contributor.nonIdAuthorSHUR, M-
dc.contributor.nonIdAuthorCOOK, P-
dc.contributor.nonIdAuthorMARTINEZ, E-
dc.contributor.nonIdAuthorMARTINEZ, EJ-
dc.contributor.nonIdAuthorEVANS, K-
dc.contributor.nonIdAuthorSTUTZ, CE-
dc.type.journalArticleNote-
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