Reply to Comments by Ortiz-Conde et al.

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In this response, we show that the paper by Kim et al. by our group has a different research purpose and uses different modeling processes, which was not described in the previous work by Ortiz-Conde et al. The comments issued by Ortiz-Conde et al., who claim that our paper corresponds to a particular case of their previous work, are in our opinion overgeneralized. Differences compared to Ortiz-Conde's previous work are discussed in detail. We also explain how the problem on threshold voltage pointed out by Ortiz-Conde et al. can be solved through a semiempirical method from measured data.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2018-09
Language
English
Article Type
Editorial Material
Keywords

SOURCE RESISTANCES; THRESHOLD VOLTAGE; MOSFETS; DRAIN; DIFFERENCE; EXTRACTION; PARAMETERS

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.9, pp.4022 - 4024

ISSN
0018-9383
DOI
10.1109/TED.2018.2859306
URI
http://hdl.handle.net/10203/245641
Appears in Collection
EE-Journal Papers(저널논문)
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