DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Gun-Hee | ko |
dc.contributor.author | Bae, Hagyoul | ko |
dc.contributor.author | Hur, Jae | ko |
dc.contributor.author | Kim, Choong-Ki | ko |
dc.contributor.author | Lee, Geon-Bum | ko |
dc.contributor.author | Bang, Tewook | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2018-09-18T06:35:49Z | - |
dc.date.available | 2018-09-18T06:35:49Z | - |
dc.date.created | 2018-09-10 | - |
dc.date.created | 2018-09-10 | - |
dc.date.issued | 2018-09 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.9, pp.4022 - 4024 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/245641 | - |
dc.description.abstract | In this response, we show that the paper by Kim et al. by our group has a different research purpose and uses different modeling processes, which was not described in the previous work by Ortiz-Conde et al. The comments issued by Ortiz-Conde et al., who claim that our paper corresponds to a particular case of their previous work, are in our opinion overgeneralized. Differences compared to Ortiz-Conde's previous work are discussed in detail. We also explain how the problem on threshold voltage pointed out by Ortiz-Conde et al. can be solved through a semiempirical method from measured data. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | SOURCE RESISTANCES | - |
dc.subject | THRESHOLD VOLTAGE | - |
dc.subject | MOSFETS | - |
dc.subject | DRAIN | - |
dc.subject | DIFFERENCE | - |
dc.subject | EXTRACTION | - |
dc.subject | PARAMETERS | - |
dc.title | Reply to Comments by Ortiz-Conde et al. | - |
dc.type | Article | - |
dc.identifier.wosid | 000442357000063 | - |
dc.identifier.scopusid | 2-s2.0-85051409446 | - |
dc.type.rims | ART | - |
dc.citation.volume | 65 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 4022 | - |
dc.citation.endingpage | 4024 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2018.2859306 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Kim, Gun-Hee | - |
dc.contributor.nonIdAuthor | Kim, Choong-Ki | - |
dc.contributor.nonIdAuthor | Lee, Geon-Bum | - |
dc.contributor.nonIdAuthor | Bang, Tewook | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Editorial Material | - |
dc.subject.keywordAuthor | Drain resistance | - |
dc.subject.keywordAuthor | extrinsic resistance | - |
dc.subject.keywordAuthor | high-k metal gate (HKMG) MOSFET | - |
dc.subject.keywordAuthor | intrinsic resistance | - |
dc.subject.keywordAuthor | parasitic resistance | - |
dc.subject.keywordAuthor | separate extraction | - |
dc.subject.keywordAuthor | series resistance | - |
dc.subject.keywordAuthor | source resistance | - |
dc.subject.keywordPlus | SOURCE RESISTANCES | - |
dc.subject.keywordPlus | THRESHOLD VOLTAGE | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | DRAIN | - |
dc.subject.keywordPlus | DIFFERENCE | - |
dc.subject.keywordPlus | EXTRACTION | - |
dc.subject.keywordPlus | PARAMETERS | - |
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