Reply to Comments by Ortiz-Conde et al.

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dc.contributor.authorKim, Gun-Heeko
dc.contributor.authorBae, Hagyoulko
dc.contributor.authorHur, Jaeko
dc.contributor.authorKim, Choong-Kiko
dc.contributor.authorLee, Geon-Bumko
dc.contributor.authorBang, Tewookko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2018-09-18T06:35:49Z-
dc.date.available2018-09-18T06:35:49Z-
dc.date.created2018-09-10-
dc.date.created2018-09-10-
dc.date.issued2018-09-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.9, pp.4022 - 4024-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/245641-
dc.description.abstractIn this response, we show that the paper by Kim et al. by our group has a different research purpose and uses different modeling processes, which was not described in the previous work by Ortiz-Conde et al. The comments issued by Ortiz-Conde et al., who claim that our paper corresponds to a particular case of their previous work, are in our opinion overgeneralized. Differences compared to Ortiz-Conde's previous work are discussed in detail. We also explain how the problem on threshold voltage pointed out by Ortiz-Conde et al. can be solved through a semiempirical method from measured data.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectSOURCE RESISTANCES-
dc.subjectTHRESHOLD VOLTAGE-
dc.subjectMOSFETS-
dc.subjectDRAIN-
dc.subjectDIFFERENCE-
dc.subjectEXTRACTION-
dc.subjectPARAMETERS-
dc.titleReply to Comments by Ortiz-Conde et al.-
dc.typeArticle-
dc.identifier.wosid000442357000063-
dc.identifier.scopusid2-s2.0-85051409446-
dc.type.rimsART-
dc.citation.volume65-
dc.citation.issue9-
dc.citation.beginningpage4022-
dc.citation.endingpage4024-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/TED.2018.2859306-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorKim, Gun-Hee-
dc.contributor.nonIdAuthorKim, Choong-Ki-
dc.contributor.nonIdAuthorLee, Geon-Bum-
dc.contributor.nonIdAuthorBang, Tewook-
dc.description.isOpenAccessN-
dc.type.journalArticleEditorial Material-
dc.subject.keywordAuthorDrain resistance-
dc.subject.keywordAuthorextrinsic resistance-
dc.subject.keywordAuthorhigh-k metal gate (HKMG) MOSFET-
dc.subject.keywordAuthorintrinsic resistance-
dc.subject.keywordAuthorparasitic resistance-
dc.subject.keywordAuthorseparate extraction-
dc.subject.keywordAuthorseries resistance-
dc.subject.keywordAuthorsource resistance-
dc.subject.keywordPlusSOURCE RESISTANCES-
dc.subject.keywordPlusTHRESHOLD VOLTAGE-
dc.subject.keywordPlusMOSFETS-
dc.subject.keywordPlusDRAIN-
dc.subject.keywordPlusDIFFERENCE-
dc.subject.keywordPlusEXTRACTION-
dc.subject.keywordPlusPARAMETERS-
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