DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hur, Ji-Hyun | ko |
dc.contributor.author | Jeon, Sanghun | ko |
dc.date.accessioned | 2018-03-21T02:53:12Z | - |
dc.date.available | 2018-03-21T02:53:12Z | - |
dc.date.created | 2018-03-07 | - |
dc.date.created | 2018-03-07 | - |
dc.date.issued | 2016-02 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v.6 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | http://hdl.handle.net/10203/240768 | - |
dc.description.abstract | As silicon-based electronics approach the limit of scaling for increasing the performance and chip density, III-V compound semiconductors have started to attract significant attention owing to their high carrier mobility. However, the mobility benefits of III-V compounds are too easily accepted, ignoring a harmful effect of unavoidable threading dislocations that could fundamentally limit the applicability of these materials in nanometer-scale electronics. In this paper, we present a theoretical model that describes the degradation of carrier mobility by charged dislocations in quantum-confined III-V semiconductor metal oxide field effect transistors (MOSFETs). Based on the results, we conclude that in order for III-V compound MOSFETs to outperform silicon MOSFETs, Fermi level pinning in the channel should be eliminated for yielding carriers with high injection velocity. | - |
dc.language | English | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.subject | INAS PHEMTS | - |
dc.title | III-V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation | - |
dc.type | Article | - |
dc.identifier.wosid | 000370796300001 | - |
dc.identifier.scopusid | 2-s2.0-84959450298 | - |
dc.type.rims | ART | - |
dc.citation.volume | 6 | - |
dc.citation.publicationname | SCIENTIFIC REPORTS | - |
dc.identifier.doi | 10.1038/srep22001 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.nonIdAuthor | Hur, Ji-Hyun | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | INAS PHEMTS | - |
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