Three- dimensional metal devices highly suspended above semiconductor substrate, their circuit model, and method for manufacturing the same 반도체 기판 위에 높이 떠 있는 3차원 금속 소자, 그 회로모델, 및 그 제조방법

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Disclosed are a three dimensional metal device floated over a semiconductor substrate, a circuit thereof, and a manufacturing method thereof. A passive electric device for wireless communications and optical communications, such as a spiral inductor, a solenoid inductor, a spiral transformer, a solenoid transformer, a micro mirror, a transmission line is floated over and apart by a few ten micrometers from the semiconductor substrate. These three dimensional metal devices remarkably decrease a signal loss to the substrate, to thereby enhance the device performance, to allow a modeling of a device separated from the substrate, and to make it possible to form an integrated circuit below the device. Further, the three dimensional metal device is manufactured in a monolithic method on the integrated circuit such that it does not affect on the integrated circuit formed therebelow.
Assignee
KAIST
Country
US (United States)
Issue Date
2004-06-03
Application Date
2003-09-29
Application Number
10473555
Registration Date
2004-06-03
Registration Number
20040104449
URI
http://hdl.handle.net/10203/232567
Appears in Collection
EE-Patent(특허)
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