DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bae, Hagyoul | ko |
dc.contributor.author | Jang, Byung Chul | ko |
dc.contributor.author | Park, Hongkeun | ko |
dc.contributor.author | Jung, Soo-Ho | ko |
dc.contributor.author | Lee, Hye Moon | ko |
dc.contributor.author | Park, Jun-Young | ko |
dc.contributor.author | Jeon, Seung-Bae | ko |
dc.contributor.author | Son, Gyeongho | ko |
dc.contributor.author | Tcho, Il-Woong | ko |
dc.contributor.author | Yu, Kyoungsik | ko |
dc.contributor.author | Im, Sung Gap | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2017-11-01T11:12:12Z | - |
dc.date.available | 2017-11-01T11:12:12Z | - |
dc.date.created | 2017-10-24 | - |
dc.date.created | 2017-10-24 | - |
dc.date.created | 2017-10-24 | - |
dc.date.issued | 2017-10 | - |
dc.identifier.citation | NANO LETTERS, v.10, no.10, pp.6443 - 6452 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | http://hdl.handle.net/10203/226673 | - |
dc.description.abstract | Fabric-based electronic textiles (e-textiles) are the fundamental components of wearable electronic systems, which can provide convenient hand-free access to computer and electronics applications. However, e-textile technologies presently face significant technical challenges. These challenges include difficulties of fabrication due to the delicate nature of the materials, and limited operating time, a consequence of the conventional normally on computing architecture, with volatile power-hungry electronic components, and modest battery storage. Here, we report a novel poly(ethylene glycol dimethacrylate) (pEGDMA)textile memristive nonvolatile logic-in-memory circuit, enabling normally off computing, that can overcome those challenges. To form the metal electrode and resistive switching layer, strands of cotton yarn were coated with aluminum (Al) using a solution dip coating method, and the pEGDMA was conformally applied using an initiated chemical vapor deposition process. The intersection of two Al/pEGDMA coated yarns becomes a unit memristor in the lattice structure. The pEGDMA-Textile Memristor (ETM), a form of crossbar array, was interwoven using a grid of Al/pEGDMA coated yarns and untreated yarns. The former were employed in the active memristor and the latter suppressed cell-to-cell disturbance. We experimentally demonstrated for the first time that the basic Boolean functions, including a half adder as well as NOT, NOR, OR, AND, and NAND logic gates, are successfully implemented with the ETM crossbar array on a fabric substrate. This research may represent a breakthrough development for practical wearable and smart fibertronics. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Functional Circuitry on Commercial Fabric via Textile-Compatible Nanoscale Film Coating Process for Fibertronics | - |
dc.type | Article | - |
dc.identifier.wosid | 000413057500081 | - |
dc.identifier.scopusid | 2-s2.0-85031283971 | - |
dc.type.rims | ART | - |
dc.citation.volume | 10 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | 6443 | - |
dc.citation.endingpage | 6452 | - |
dc.citation.publicationname | NANO LETTERS | - |
dc.identifier.doi | 10.1021/acs.nanolett.7b03435 | - |
dc.contributor.localauthor | Yu, Kyoungsik | - |
dc.contributor.localauthor | Im, Sung Gap | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Jung, Soo-Ho | - |
dc.contributor.nonIdAuthor | Lee, Hye Moon | - |
dc.contributor.nonIdAuthor | Park, Jun-Young | - |
dc.contributor.nonIdAuthor | Tcho, Il-Woong | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Textile memristor | - |
dc.subject.keywordAuthor | fabric | - |
dc.subject.keywordAuthor | fibertronics | - |
dc.subject.keywordAuthor | initiated chemical vapor deposition method | - |
dc.subject.keywordAuthor | solution dip coating method | - |
dc.subject.keywordPlus | MEMRISTOR-AIDED LOGIC | - |
dc.subject.keywordPlus | TRIBOELECTRIC NANOGENERATOR | - |
dc.subject.keywordPlus | WEARABLE ELECTRONICS | - |
dc.subject.keywordPlus | SHOE INSOLE | - |
dc.subject.keywordPlus | ENERGY | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | SUPERCAPACITORS | - |
dc.subject.keywordPlus | OPERATIONS | - |
dc.subject.keywordPlus | STORAGE | - |
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