Proton and gamma-ray Induced Radiation Effects on 1 Gbit LPDDR SDRAM Fabricated on Epitaxial Wafer for Space Applications

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We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary metal-oxide-semiconductor (CMOS) technology). We compare our radiation tolerance data for LPDDR SDRAM with those of general DDR SDRAM. The data confirms that our devices under test (DUTs) are potential candidates for space flight applications.
Publisher
KOREAN SPACE SCIENCE SOC
Issue Date
2016-09
Language
English
Article Type
Article
Citation

JOURNAL OF ASTRONOMY AND SPACE SCIENCE, v.33, no.3, pp.229 - 236

ISSN
2093-5587
DOI
10.5140/JASS.2016.33.3.229
URI
http://hdl.handle.net/10203/224505
Appears in Collection
RIMS Journal Papers
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