Photon-assisted tunneling for sub-bandgap light detection in silicon PN-doped waveguides

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We demonstrate silicon ridge waveguide photo-detectors capable of sub-bandgap light absorption and avalanche multiplication. The proposed waveguide photo-detectors contain highly doped PN junction, where a strong electric field can generate the photon-assisted tunneling current for sub-bandgap light incidence and amplify the generated photocurrent by the avalanche multiplication effect. The voltage-dependent sub-bandgap absorption coefficient and multiplication gain are experimentally evaluated for various doping configurations to find optimal photo-response with low dark currents. As a result, our representative silicon waveguide photo-detector gives sub-bandgap responsivities of similar to 10 and similar to 2 A/W under the applied reverse bias voltage of -8.3 V for near-infrared wavelengths of 1.31 and 1.52 mu m, respectively. The voltage-dependent frequency photo-response is also demonstrated with theoretical verification. (C) 2017 Optical Society of America
Publisher
OPTICAL SOC AMER
Issue Date
2017-02
Language
English
Article Type
Article
Keywords

ALL-SILICON; INFRARED PHOTODIODES; INTRINSIC SILICON; EMITTING-DIODES; 300 K; PHOTODETECTORS; TEMPERATURE

Citation

OPTICS EXPRESS, v.25, no.4, pp.4284 - 4296

ISSN
1094-4087
DOI
10.1364/OE.25.004284
URI
http://hdl.handle.net/10203/223546
Appears in Collection
EE-Journal Papers(저널논문)
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