Electron transport properties in magnetic tunnel junctions with epitaxial NiFe (111) ferromagnetic bottom electrodes

By employing epitaxial NiFe (111) films as ferromagnetic bottom electrodes, magnetic tunnel junctions with layer sequence of Si (111)/epitaxial Ag/epitaxial Cu/epitaxial NiFe/Al-oxide/CoFe/IrMn/NiFe/Ta were prepared. High tunneling magnetoresistance (TMR) ratios were obtained and the bias dependence of TMR was remarkably reduced. The reason for the small bias dependence of TMR was explained by inelastic electron tunneling spectroscopy. It was clearly elucidated that a well-defined sharp interface formed between the tunnel barrier and the ferromagnetic electrode that is nearly free of crystalline defects. This magnetic tunnel junction has a large capability in engineering aspects if we can reduce the barrier thickness further by decreasing the interface roughness. (C) 2003 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2003-06
Language
ENG
Keywords

VOLTAGE-DEPENDENCE; BIAS VOLTAGE; MAGNETORESISTANCE; EXCITATION

Citation

APPLIED PHYSICS LETTERS, v.82, no.26, pp.4735 - 4737

ISSN
0003-6951
URI
http://hdl.handle.net/10203/2230
Appears in Collection
MS-Journal Papers(저널논문)
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