DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yu, JH | ko |
dc.contributor.author | Lee, HyuckMo | ko |
dc.contributor.author | Ando, Y | ko |
dc.contributor.author | Miyazaki, T | ko |
dc.date.accessioned | 2007-11-29T07:49:18Z | - |
dc.date.available | 2007-11-29T07:49:18Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-06 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.82, no.26, pp.4735 - 4737 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/2230 | - |
dc.description.abstract | By employing epitaxial NiFe (111) films as ferromagnetic bottom electrodes, magnetic tunnel junctions with layer sequence of Si (111)/epitaxial Ag/epitaxial Cu/epitaxial NiFe/Al-oxide/CoFe/IrMn/NiFe/Ta were prepared. High tunneling magnetoresistance (TMR) ratios were obtained and the bias dependence of TMR was remarkably reduced. The reason for the small bias dependence of TMR was explained by inelastic electron tunneling spectroscopy. It was clearly elucidated that a well-defined sharp interface formed between the tunnel barrier and the ferromagnetic electrode that is nearly free of crystalline defects. This magnetic tunnel junction has a large capability in engineering aspects if we can reduce the barrier thickness further by decreasing the interface roughness. (C) 2003 American Institute of Physics. | - |
dc.description.sponsorship | This study was supported by IT-program of Research Revolution 2002 ~RR2002!, Grants-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan, CREST of JST ~Japan Science and Technology!, and the Mitsubishi Foundation. In addition, one of the authors ~J.H.Y.! gratefully acknowledges partial support from the BK21 Project of the Ministry of Education, Korea. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | VOLTAGE-DEPENDENCE | - |
dc.subject | BIAS VOLTAGE | - |
dc.subject | MAGNETORESISTANCE | - |
dc.subject | EXCITATION | - |
dc.title | Electron transport properties in magnetic tunnel junctions with epitaxial NiFe (111) ferromagnetic bottom electrodes | - |
dc.type | Article | - |
dc.identifier.wosid | 000183757400035 | - |
dc.identifier.scopusid | 2-s2.0-0041345810 | - |
dc.type.rims | ART | - |
dc.citation.volume | 82 | - |
dc.citation.issue | 26 | - |
dc.citation.beginningpage | 4735 | - |
dc.citation.endingpage | 4737 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, HyuckMo | - |
dc.contributor.nonIdAuthor | Yu, JH | - |
dc.contributor.nonIdAuthor | Ando, Y | - |
dc.contributor.nonIdAuthor | Miyazaki, T | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | VOLTAGE-DEPENDENCE | - |
dc.subject.keywordPlus | BIAS VOLTAGE | - |
dc.subject.keywordPlus | MAGNETORESISTANCE | - |
dc.subject.keywordPlus | EXCITATION | - |
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