Temperature measurement of Joule heated silicon micro/nanowires using selectively decorated quantum dots

We developed a novel method to measure local temperature at micro/nano-scale regions using selective deposition of quantum dots (QDs) as a sensitive temperature probe and measured the temperature of Joule heated silicon microwires (SiMWs) and silicon nanowires (SiNWs) by this method. The QDs are selectively coated only on the surface of the SiMWs and SiNWs by a sequential process composed of selective opening of a polymethyl methacrylate layer via Joule heating, covalent bonding of QDs, and lift-off process. The temperatures of the Joule-heated SiMWs and SiNWs can be measured by characterizing the temperature-dependent shift of photoluminescence peak of the selectively deposited QDs even with far-field optics. The validity of the extracted temperature has been also confirmed by comparing with numerical simulation results. The proposed method can potentially provide micro/nanoscale measurement of localized temperatures for a wide range of electrical and optical devices.
Publisher
IOP PUBLISHING LTD
Issue Date
2016-12
Language
English
Keywords

SCANNING THERMAL MICROSCOPY; NANOWIRE ARRAY; THIN-FILM; CDSE; PHOTOLUMINESCENCE; PHOTOOXIDATION; NANOCRYSTALS; DEPENDENCE; SENSOR

Citation

NANOTECHNOLOGY, v.27, no.50

ISSN
0957-4484
DOI
10.1088/0957-4484/27/50/505705
URI
http://hdl.handle.net/10203/214397
Appears in Collection
ME-Journal Papers(저널논문)EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
  • Hit : 132
  • Download : 0
  • Cited 0 times in thomson ci
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡClick to seewebofscience_button
⊙ Cited 1 items in WoSClick to see citing articles inrecords_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0