Threshold Voltage Tuning Technique in Gate-All-Around MOSFETs by Utilizing Gate Electrode With Potential Distribution

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A technique for achieving tunable threshold voltage (VTH) is investigated in a gate-all-around device, which is a representative floating body structure. For this concept, the in-plane gate is designed to be both a driving gate and a control gate. The control gate governs the potential distribution along the gate electrode, which acts as a built-in voltage divider in the MOSFET. During the VTH tuning by the control gate, there is no electrical performance degradation, and modulation of VTH follows a nearly perfect linear tendency. The results are verified by the electrical measurements of the fabricated device and a multi-physics simulator.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2016-11
Language
English
Article Type
Article
Keywords

FINFET

Citation

IEEE ELECTRON DEVICE LETTERS, v.37, no.11, pp.1391 - 1394

ISSN
0741-3106
DOI
10.1109/LED.2016.2612653
URI
http://hdl.handle.net/10203/214218
Appears in Collection
EE-Journal Papers(저널논문)
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