DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Jun-Young | ko |
dc.contributor.author | Bae, Hagyoul | ko |
dc.contributor.author | Moon, Dong-Il | ko |
dc.contributor.author | Jeon, Chang-Hoon | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2016-11-30T08:30:00Z | - |
dc.date.available | 2016-11-30T08:30:00Z | - |
dc.date.created | 2016-11-17 | - |
dc.date.created | 2016-11-17 | - |
dc.date.created | 2016-11-17 | - |
dc.date.issued | 2016-11 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.37, no.11, pp.1391 - 1394 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/214218 | - |
dc.description.abstract | A technique for achieving tunable threshold voltage (VTH) is investigated in a gate-all-around device, which is a representative floating body structure. For this concept, the in-plane gate is designed to be both a driving gate and a control gate. The control gate governs the potential distribution along the gate electrode, which acts as a built-in voltage divider in the MOSFET. During the VTH tuning by the control gate, there is no electrical performance degradation, and modulation of VTH follows a nearly perfect linear tendency. The results are verified by the electrical measurements of the fabricated device and a multi-physics simulator. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | FINFET | - |
dc.title | Threshold Voltage Tuning Technique in Gate-All-Around MOSFETs by Utilizing Gate Electrode With Potential Distribution | - |
dc.type | Article | - |
dc.identifier.wosid | 000389331100006 | - |
dc.identifier.scopusid | 2-s2.0-84994626525 | - |
dc.type.rims | ART | - |
dc.citation.volume | 37 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 1391 | - |
dc.citation.endingpage | 1394 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2016.2612653 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.subject.keywordAuthor | gate-all-around (GAA) | - |
dc.subject.keywordAuthor | nanowire transistor | - |
dc.subject.keywordAuthor | tunable threshold voltage | - |
dc.subject.keywordPlus | FINFET | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.