TiN/PECVD-Si3N4/TiN diaphragm-based capacitive-type MEMS acoustic sensor

Cited 2 time in webofscience Cited 0 time in scopus
  • Hit : 262
  • Download : 0
A capacitive-type MEMS acoustic sensor with a planarised TiN/plasma-enhanced chemical vapour deposition -Si3N4/TiN diaphragm based on a polyimide sacrificial layer is presented. The multi-layer diaphragm has the effective residual stress of +31.5 MPa. Furthermore, this sensor features a 21% lower parasitic capacitance and a 56% lower air-gap resistance in comparison with those of a sensor fabricated without planarisation. Five photomasks were used. In addition, to evaluate the frequency response, both an effective capacitance model and an equivalent circuit model equipped with a voltage-controlled voltage source are newly proposed and compared with conventional models. The open-circuit sensitivity is modelled to -45.4 dBV/Pa at 1 kHz with 9.6 V, indicating a difference of 0.9 dB in comparison with the open-circuit sensitivity of the conventional model
Publisher
INST ENGINEERING TECHNOLOGY-IET
Issue Date
2016-03
Language
English
Article Type
Article
Keywords

MICROPHONE

Citation

ELECTRONICS LETTERS, v.52, no.6, pp.468 - 469

ISSN
0013-5194
DOI
10.1049/el.2015.3856
URI
http://hdl.handle.net/10203/208471
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 2 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0