TiN/PECVD-Si3N4/TiN diaphragm-based capacitive-type MEMS acoustic sensor

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dc.contributor.authorLee, Jae Wooko
dc.contributor.authorJeon, J. H.ko
dc.contributor.authorKim, Y. G.ko
dc.contributor.authorLee, S. Q.ko
dc.contributor.authorYang, W. S.ko
dc.contributor.authorLee, Jungsooko
dc.contributor.authorLee, Sang-Gugko
dc.date.accessioned2016-06-29T02:04:44Z-
dc.date.available2016-06-29T02:04:44Z-
dc.date.created2016-04-12-
dc.date.created2016-04-12-
dc.date.issued2016-03-
dc.identifier.citationELECTRONICS LETTERS, v.52, no.6, pp.468 - 469-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/208471-
dc.description.abstractA capacitive-type MEMS acoustic sensor with a planarised TiN/plasma-enhanced chemical vapour deposition -Si3N4/TiN diaphragm based on a polyimide sacrificial layer is presented. The multi-layer diaphragm has the effective residual stress of +31.5 MPa. Furthermore, this sensor features a 21% lower parasitic capacitance and a 56% lower air-gap resistance in comparison with those of a sensor fabricated without planarisation. Five photomasks were used. In addition, to evaluate the frequency response, both an effective capacitance model and an equivalent circuit model equipped with a voltage-controlled voltage source are newly proposed and compared with conventional models. The open-circuit sensitivity is modelled to -45.4 dBV/Pa at 1 kHz with 9.6 V, indicating a difference of 0.9 dB in comparison with the open-circuit sensitivity of the conventional model-
dc.languageEnglish-
dc.publisherINST ENGINEERING TECHNOLOGY-IET-
dc.subjectMICROPHONE-
dc.titleTiN/PECVD-Si3N4/TiN diaphragm-based capacitive-type MEMS acoustic sensor-
dc.typeArticle-
dc.identifier.wosid000371860000031-
dc.identifier.scopusid2-s2.0-84960881724-
dc.type.rimsART-
dc.citation.volume52-
dc.citation.issue6-
dc.citation.beginningpage468-
dc.citation.endingpage469-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.identifier.doi10.1049/el.2015.3856-
dc.contributor.localauthorLee, Sang-Gug-
dc.contributor.nonIdAuthorLee, Jae Woo-
dc.contributor.nonIdAuthorJeon, J. H.-
dc.contributor.nonIdAuthorKim, Y. G.-
dc.contributor.nonIdAuthorLee, S. Q.-
dc.contributor.nonIdAuthorYang, W. S.-
dc.type.journalArticleArticle-
dc.subject.keywordAuthoracoustic transducers-
dc.subject.keywordAuthormicrosensors-
dc.subject.keywordAuthorplasma CVD-
dc.subject.keywordAuthorplanarisation-
dc.subject.keywordAuthorair gaps-
dc.subject.keywordAuthorinternal stresses-
dc.subject.keywordAuthormasks-
dc.subject.keywordAuthorfrequency response-
dc.subject.keywordAuthorequivalent circuits-
dc.subject.keywordAuthoractive networks-
dc.subject.keywordAuthorsilicon compounds-
dc.subject.keywordAuthortitanium compounds-
dc.subject.keywordAuthorfrequency 1 kHz-
dc.subject.keywordAuthorvoltage 9-
dc.subject.keywordAuthor6 V-
dc.subject.keywordAuthorTiN-Si3N4-TiN-
dc.subject.keywordAuthordiaphragm-based capacitive-type MEMS acoustic sensor-
dc.subject.keywordAuthorplasma-enhanced chemical vapour deposition-
dc.subject.keywordAuthorPECVD-
dc.subject.keywordAuthorpolyimide sacrificial layer-
dc.subject.keywordAuthormultilayer diaphragm-
dc.subject.keywordAuthorresidual stress-
dc.subject.keywordAuthorparasitic capacitance-
dc.subject.keywordAuthorair-gap resistance-
dc.subject.keywordAuthorplanarisation-
dc.subject.keywordAuthorphotomasks-
dc.subject.keywordAuthorfrequency response-
dc.subject.keywordAuthorcapacitance model-
dc.subject.keywordAuthorequivalent circuit model-
dc.subject.keywordAuthorvoltage-controlled voltage source-
dc.subject.keywordAuthoropen-circuit sensitivity-
dc.subject.keywordPlusMICROPHONE-
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