Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition

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The effects of the deposition temperature on titanium carbide film formed by atomic layer deposition are investigated for gate workfunction (WF) engineering. As the deposition temperature increases from 250 degrees C to 500 degrees C, the WF of the TiC decreases from 5.24 eV to 4.45 eV. This WF dependency on the deposition temperature is mainly attributed to the average WF of each orientation of the sub-planes of the TiC film. An investigation of a tunable WF is conducted through Auger electron spectroscopy, transmission electron microscopy, and X-ray diffraction.
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Issue Date
2015-12
Language
English
Article Type
Article
Keywords

METAL GATE; SEMICONDUCTOR

Citation

SOLID-STATE ELECTRONICS, v.114, pp.90 - 93

ISSN
0038-1101
DOI
10.1016/j.sse.2015.07.011
URI
http://hdl.handle.net/10203/205135
Appears in Collection
EE-Journal Papers(저널논문)
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