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Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition

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dc.contributor.authorKim, Choong-Kiko
dc.contributor.authorAhn, Hyun Junko
dc.contributor.authorMoon, Jung Minko
dc.contributor.authorLee, Sukwonko
dc.contributor.authorMoon, Dong-Iiko
dc.contributor.authorPark, Jeong Sooko
dc.contributor.authorCho, Byung-Jinko
dc.contributor.authorChoi, Yang-Kyuko
dc.contributor.authorLee, Seok-Heeko
dc.date.accessioned2016-04-20T06:10:26Z-
dc.date.available2016-04-20T06:10:26Z-
dc.date.created2015-11-21-
dc.date.created2015-11-21-
dc.date.issued2015-12-
dc.identifier.citationSOLID-STATE ELECTRONICS, v.114, pp.90 - 93-
dc.identifier.issn0038-1101-
dc.identifier.urihttp://hdl.handle.net/10203/205135-
dc.description.abstractThe effects of the deposition temperature on titanium carbide film formed by atomic layer deposition are investigated for gate workfunction (WF) engineering. As the deposition temperature increases from 250 degrees C to 500 degrees C, the WF of the TiC decreases from 5.24 eV to 4.45 eV. This WF dependency on the deposition temperature is mainly attributed to the average WF of each orientation of the sub-planes of the TiC film. An investigation of a tunable WF is conducted through Auger electron spectroscopy, transmission electron microscopy, and X-ray diffraction.-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.subjectMETAL GATE-
dc.subjectSEMICONDUCTOR-
dc.titleTemperature control for the gate workfunction engineering of TiC film by atomic layer deposition-
dc.typeArticle-
dc.identifier.wosid000363193300016-
dc.identifier.scopusid2-s2.0-84941565817-
dc.type.rimsART-
dc.citation.volume114-
dc.citation.beginningpage90-
dc.citation.endingpage93-
dc.citation.publicationnameSOLID-STATE ELECTRONICS-
dc.identifier.doi10.1016/j.sse.2015.07.011-
dc.contributor.localauthorCho, Byung-Jin-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.localauthorLee, Seok-Hee-
dc.contributor.nonIdAuthorKim, Choong-Ki-
dc.contributor.nonIdAuthorAhn, Hyun Jun-
dc.contributor.nonIdAuthorMoon, Jung Min-
dc.contributor.nonIdAuthorLee, Sukwon-
dc.contributor.nonIdAuthorMoon, Dong-Ii-
dc.contributor.nonIdAuthorPark, Jeong Soo-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorAtomic layer deposition-
dc.subject.keywordAuthorTiC-
dc.subject.keywordAuthorTitanium carbide-
dc.subject.keywordAuthorTitanium compounds-
dc.subject.keywordAuthorWorkfunction-
dc.subject.keywordAuthorTunability-
dc.subject.keywordPlusMETAL GATE-
dc.subject.keywordPlusSEMICONDUCTOR-
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EE-Journal Papers(저널논문)
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