A bottom-gate silicon nanowire field-effect transistor with functionalized palladium nanoparticles for hydrogen gas sensors

The highly sensitive operation of a bottom-gate silicon nanowire (SiNW) field-effect transistor (FET)-based hydrogen (H-2) sensor is demonstrated by controlling the working regime of the sensor. It is observed that the deposition of palladium (Pd) nanoparticles on the SiNW surface for the selective absorption of H-2 can result in a significant enhancement of the electrostatic properties, such as the subthreshold swing and on-current, of the SiNW FET-based H-2 sensor. By comparing the experimental results with the numerical simulation, we conclude that the improvement of the electrostatic properties of the sensor is due to the coupling effect between the electrostatic potentials in the Pd nanoparticle and bottom gate. Based on these results, highly sensitive detection of H-2 gas could be achieved in the subthreshold regime where the gating effect induced by absorbed H-2 gas is the most effective.
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Issue Date
2015-12
Language
ENG
Citation

SOLID-STATE ELECTRONICS, v.114, pp.76 - 79

ISSN
0038-1101
DOI
10.1016/j.sse.2015.07.012
URI
http://hdl.handle.net/10203/205122
Appears in Collection
ME-Journal Papers(저널논문)
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