One-step etching, doping, and adhesion-control process for graphene electrodes

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Enhancing the electrical conductivity and reliability of graphene electrodes is critical for the practical realization of graphene-based electronics, since these factors influence the electrical performance of devices. To achieve such improvements in graphene electrodes requires additional processes such as doping and surface treatments, which inevitably complicate device fabrication. Here, we introduce a novel, straightforward one-step etching method, in which a catalytic copper substrate is etched in imidazole-containing ammonium persulfate solution, of simultaneously enhancing the electrical and adhesion properties of graphene grown on copper foil by chemical vapor deposition. Applying one-step etching method, the sheet resistance of monolayer graphene with 270 Omega/sq is obtained, while the adhesion of graphene is improved by 20%. Moreover, the electrical conductivity of graphene remained improved after storage for 30 days in ambient conditions without any passivation layers, and the graphene was almost transparent with transmittance of 97.7% at 550 nm. The enhancement of the electrical and adhesion properties of graphene originated from the synergistic adsorption of imidazole and etched Cu ions, which results in p-doping of graphene.
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Issue Date
2015-02
Language
English
Article Type
Article
Keywords

CHEMICAL-VAPOR-DEPOSITION; CVD-GROWN GRAPHENE; LARGE-AREA; TRANSPARENT ELECTRODES; EFFICIENT TRANSFER; LAYER GRAPHENE; SIO2 SUBSTRATE; SURFACE-ENERGY; HIGH-QUALITY; FILMS

Citation

CARBON, v.82, pp.168 - 175

ISSN
0008-6223
DOI
10.1016/j.carbon.2014.10.059
URI
http://hdl.handle.net/10203/201019
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