Showing results 3 to 8 of 8
Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs Kim, Seong Kwang; Lim, Hyeong-Rak; Jeong, Jaejoong; Lee, Seung Woo; Jeong, Ho Jin; Park, Juhyuk; Kim, Joon Pyo; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.1, pp.393 - 399, 2024-01 |
Heterogeneous and Monolithic 3D Integration Technology for Mixed-Signal ICs Jeong, Jaeyong; Geum, Dae-Myeong; Kim, SangHyeon, ELECTRONICS, v.11, no.19, 2022-10 |
Impact of Bottom-Gate Biasing on Implant-Free Junctionless Ge-on- Insulator n-MOSFETs Lim, Hyeong-Rak; Kim, Seongkwang; Han, Jae-Hoon; Kim, Hansung; Geum, Dae-Myeong; Lee, Yun-Joong; Ju, Byeong-Kwon; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.9, pp.1362 - 1365, 2019-09 |
Photo-Responsible Synapse Using Ge Synaptic Transistors and GaAs Photodetectors Kim, Seong Kwang; Geum, Dae-Myeong; Lim, Hyeong-Rak; Han, JaeHoon; Kim, Hyungjun; Jeong, YeonJoo; Kim, Sang-Hyeon, IEEE ELECTRON DEVICE LETTERS, v.41, no.4, pp.605 - 608, 2020-04 |
Stackable InGaAs-on-Insulator HEMTs for Monolithic 3-D Integration Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Geum, Dae-Myeong; Park, Juyeong; Jang, Jae-Hyung; Kim, Sanghyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.5, pp.2205 - 2211, 2021-05 |
Thermal Studies of 3-D Stacked InGaAs HEMTs and Mitigation Strategy of Self-Heating Effect Using Buried Metal Insertion Jeong, Jaeyong; Kim, Seongkwang; Suh, Yoonje; Shim, Joonsup; Beak, Woo Jin; Choi, Sung Joon; Kim, Joon Pyo; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024-06 |
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