Showing results 1 to 6 of 6
Effects of implanted materials on impurity-induced layer disordering in strained Ga0.8In0.2As/GaxIn1-xAsyP1-y/Ga0.51In0.49P/GaAs quantum well structure Jang, DH; Lee, JK; Park, KH; Cho, HS; Seong, TY; Park, Chul Soon; Pyun, KE, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.36, no.10B, pp.L1364 - L1366, 1997-10 |
Quantum transport simulation of nanowire resonant tunneling diodes based on a Wigner function model with spatially dependent effective masses Lee, Joon-Ho; Shin, Mincheol, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.16, no.6, pp.1028 - 1036, 2017-11 |
Reflection-Type RTD Low-Power Amplifier With Deep Sub-mW DC Power Consumption Lee, Jongwon; Lee, Jooseok; Yang, Kyounghoon, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.24, no.8, pp.551 - 553, 2014-08 |
THEORETICAL AND EXPERIMENTAL DC CHARACTERIZATION OF INGAAS-BASED ABRUPT EMITTER HBTS Yang, Kyounghoon; COWLES, JC; EAST, JR; HADDAD, GI, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.42, no.6, pp.1047 - 1058, 1995-06 |
Ultrasensitive Phototransistor Based on WSe2-MoS2 van der Waals Heterojunction Shin, Gwang Hyuk; Park, Cheolmin; Lee, Khang June; Jin, Hyeok Jun; Choi, Sung-Yool, NANO LETTERS, v.20, no.8, pp.5741 - 5748, 2020-08 |
Wigner Transport Simulation of Resonant Tunneling Diodes with Auxiliary Quantum Wells Lee, Joon-Ho; Shin, Mincheol; Byun, Seok-Joo; Kim, Wangki, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.72, no.5, pp.622 - 627, 2018-03 |
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