THEORETICAL AND EXPERIMENTAL DC CHARACTERIZATION OF INGAAS-BASED ABRUPT EMITTER HBTS

The de characteristics of InP/InGaAs and InAlAs/InGaAs HBT's with abrupt emitter-base junctions are studied using a thermionic-field emission boundary-condition model, The model incorporates tunneling and emission into a one-dimensional drift-diffusion scheme and accounts for breakdown and bulk recombination mechanisms, The effects of abrupt heterojunction transport and electrical junction displacement on the current gain h(FE) and on the turn-on voltage are investigated, The simulations indicate that the spacer layer design has a profound effect on the de behavior of these devices, A detailed performance comparison of different emitter structures indicates that InP-emitter HBT's show a more uniform h(FE) than InAlAs-emitter HBT's especially at low current densities, Experimental data from a fabricated InAlAs/InGaAs abrupt emitter single HBT was compared to the theoretical predictions of the model, The analysis reveals that several injection and recombination mechanisms are responsible for the emitter-base forward characteristics. In the collector, the exact velocity-field profile and an anomalous multiplication factor are responsible for kinks in the output common-emitter characteristics and for soft breakdown of the collector-base junction,
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1995-06
Language
ENG
Keywords

HETEROJUNCTION BIPOLAR-TRANSISTORS; IMPACT IONIZATION COEFFICIENTS; TEMPERATURE-DEPENDENCE; COLLECTOR BREAKDOWN; ELECTRON-TRANSPORT; BOUNDARY-CONDITION; MONTE-CARLO; HETEROSTRUCTURE; ALGAAS/GAAS; ALINAS/GAINAS

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.42, no.6, pp.1047 - 1058

ISSN
0018-9383
URI
http://hdl.handle.net/10203/1089
Appears in Collection
EE-Journal Papers(저널논문)
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