Browse "School of Electrical Engineering(전기및전자공학부)" by Subject CHARGE
Showing results 1 to 13 of 13
| Characteristics of silicon nanocrystal floating gate memory using amorphous carbon/SiO2 tunnel barrier Baik, SJ; Lim, Koeng Su, APPLIED PHYSICS LETTERS, v.81, pp.5186 - 5188, 2002-12 |
| Coulomb blockade by electron-hole pairs in coupled single-electron transistors Shin, Mincheol; Lee, S; Park, KW; Kim, GH, PHYSICAL REVIEW B, v.62, no.15, pp.9951 - 9954, 2000-10 |
| Effect of Off-state Stress on Gate-Induced Drain Leakage by Interface Traps in Buried-Gate FETs Lee, Geon-Beom; Kim, Choong-Ki; Yoo, Min-Soo; Hur, Jae; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.12, pp.5126 - 5132, 2019-11 |
Efficient organic photomemory with photography-ready programming speed Kim, Min-Cheol; Seong, Hyejeong; Lee, Seungwon; Kwon, Hyukyun; Im, Sung Gap; Moon, Hanul; Yoo, Seunghyup, SCIENTIFIC REPORTS, v.6, 2016-07 |
| Electronic transport properties of coupled single-electron transistors Shin, Mincheol; Lee, S; Park, KW; Kim, GH, SOLID STATE COMMUNICATIONS, v.116, no.10, pp.527 - 532, 2000 |
| HIGH-FIELD BREAKDOWN IN THIN OXIDES GROWN IN N2O AMBIENT JOSHI, AB; Yoon, Giwan; KIM, JH; LO, GQ; KWONG, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.40, no.8, pp.1437 - 1445, 1993-08 |
| Investigation of the source-side injection characteristic of a dopant-segregated Schottky barrier metal-oxide-semiconductor field-effect-transistor Kim, Sung-Ho; Choi, Sung-Jin; Jang, Moon-Gyu; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.95, no.6, 2009-08 |
| Lateral profiling of gate dielectric damage by off-state stress and positive-bias temperature instability Lee, Geon-Beom; Kim, Choong-Ki; Bang, Tewook; Yoo, Min-Soo; Choi, Yang-Kyu, MICROELECTRONICS AND RELIABILITY, v.127, pp.114383, 2021-12 |
| Nature-Replicated Nano-in-Micro Structures for Triboelectric Energy Harvesting Seol, Myeong-Lok; Woo, Jong-Ho; Lee, Dong-Il; Im, Hwon; Hur, Jae; Choi, Yang-Kyu, SMALL, v.10, no.19, pp.3887 - 3894, 2014-10 |
| Role of hole fluence in gate oxide breakdown Li, MF; He, YD; Ma, SG; Cho, Byung Jin; Lo, KF; Xu, MZ, IEEE ELECTRON DEVICE LETTERS, v.20, no.11, pp.586 - 588, 1999-11 |
| Stability diagram of coupled single-electron transistors Shin, Mincheol; Lee, SJ; Park, KW, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.3, pp.581 - 585, 2001-09 |
| Thermal Stability and Memory Characteristics of HfON Trapping Layer for Flash Memory Device Applications Jeon, Sanghun, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.11, pp.H412 - H415, 2009 |
| Vertical-Pillar Ferroelectric Field-Effect-Transistor Memory Lee, Sangho; Kim, Giuk; Kim, Taeho; Eom, Taehyong; Jeon, Sanghun, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.16, no.10, 2022-10 |
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