Stability diagram of coupled single-electron transistors

The transformation of the stability diagram of parallel coupled single-electron transistors (SETs) with increasing coupling strength is studied theoretically. We have found that the binding of equal numbers of electrons and holes on two islands of the coupled SETs leads to a Coulomb-blockade due to the e-h pairs, resulting in an expansion of the insulating regions.
Publisher
KOREAN PHYSICAL SOC
Issue Date
2001-09
Language
ENG
Keywords

SMALL TUNNEL-JUNCTIONS; QUANTUM DOTS; TRANSPORT; CHARGE; SYSTEM; ARRAYS

Citation

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.3, pp.581 - 585

ISSN
0374-4884
URI
http://hdl.handle.net/10203/84645
Appears in Collection
EE-Journal Papers(저널논문)
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