Origin of Device Performance Enhancement of Junctionless Accumulation-Mode (JAM) Bulk FinFETs With High-kappa Gate Spacers

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In this letter, we investigated the junctionless accumulation-mode (JAM) bulk FinFETs with high-kappa gate spacers showing enhanced device performance in SS, DIBL, and ON/OFF current ratio. We found that origin of the ON-state current enhancement was reduction of the initial energy barrier between the source and channel, and reason for the OFF-state current reduction was L-G extension caused by the fringing field through high-kappa gate spacers. The OFF-state leakage current decreased by over one order of magnitude. The ON-state current was remarkably enhanced by 180% over that of low-kappa gate spacers. The high-kappa gate spacer is indispensable for enhancing the performance of the JAM field-effect transistor in a sub 20-nm -gate length regime.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2014-12
Language
English
Article Type
Article
Keywords

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Citation

IEEE ELECTRON DEVICE LETTERS, v.35, no.12, pp.1182 - 1184

ISSN
0741-3106
DOI
10.1109/LED.2014.2364093
URI
http://hdl.handle.net/10203/195112
Appears in Collection
EE-Journal Papers(저널논문)
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