Origin of Device Performance Enhancement of Junctionless Accumulation-Mode (JAM) Bulk FinFETs With High-kappa Gate Spacers

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dc.contributor.authorChoi, Ji Hunko
dc.contributor.authorKim, Tae Kyunko
dc.contributor.authorMoon, Jung Minko
dc.contributor.authorYoon, Young Gwangko
dc.contributor.authorHwang, Byeong Woonko
dc.contributor.authorKim, Dong Hyunko
dc.contributor.authorLee, Seok-Heeko
dc.date.accessioned2015-04-07T02:40:55Z-
dc.date.available2015-04-07T02:40:55Z-
dc.date.created2014-12-29-
dc.date.created2014-12-29-
dc.date.issued2014-12-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.35, no.12, pp.1182 - 1184-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/195112-
dc.description.abstractIn this letter, we investigated the junctionless accumulation-mode (JAM) bulk FinFETs with high-kappa gate spacers showing enhanced device performance in SS, DIBL, and ON/OFF current ratio. We found that origin of the ON-state current enhancement was reduction of the initial energy barrier between the source and channel, and reason for the OFF-state current reduction was L-G extension caused by the fringing field through high-kappa gate spacers. The OFF-state leakage current decreased by over one order of magnitude. The ON-state current was remarkably enhanced by 180% over that of low-kappa gate spacers. The high-kappa gate spacer is indispensable for enhancing the performance of the JAM field-effect transistor in a sub 20-nm -gate length regime.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectTRANSISTOR-
dc.titleOrigin of Device Performance Enhancement of Junctionless Accumulation-Mode (JAM) Bulk FinFETs With High-kappa Gate Spacers-
dc.typeArticle-
dc.identifier.wosid000345575400007-
dc.identifier.scopusid2-s2.0-84913535137-
dc.type.rimsART-
dc.citation.volume35-
dc.citation.issue12-
dc.citation.beginningpage1182-
dc.citation.endingpage1184-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2014.2364093-
dc.contributor.localauthorLee, Seok-Hee-
dc.contributor.nonIdAuthorMoon, Jung Min-
dc.contributor.nonIdAuthorKim, Dong Hyun-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorFringing field-
dc.subject.keywordAuthorhigh-kappa gate spacers-
dc.subject.keywordAuthorJAM FET-
dc.subject.keywordAuthorjunctionless (JL) FET-
dc.subject.keywordPlusTRANSISTOR-
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