Fabrication of 10 nm-Scale Complex 3D Nanopatterns with Multiple Shapes and Components by Secondary Sputtering Phenomenon

Abstract

We introduce an advanced ultrahigh-resolution (similar to 15 nm) patterning technique that enables the fabrication of various 3D high aspect ratio multicomponents/shaped nanostructures. This methodology utilizes the repetitive secondary sputtering phenomenon under etching plasma conditions and prepattemed fabrication control. The secondary sputtering phenomenon repetitively generates an angular distribution of target particles during ion-bombardment. This method, advanced repetitive secondary sputtering lithography, provides many strategies to fabricate complex continuous patterns and multilayer/material patterns with 10 nm-scale resolution. To demonstrate the versatility of this method, we show induced vertical alignment of liquid crystals (LCs) on indium-tin-oxide (ITO) grid patterns without any alignment layers. The ITO grid pattern fabricated in this method is found to have not only an alignment capability but also electrode properties without electrical or optical damage.