Advancing electronic packaging using microsolder balls: Making 25-nm pitch interconnection possible

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Electronic packaging technology has advanced in the direction of integrating diverse components into one package to satisfy market demands for multifunctionality as well as portability [1], [2]. For this reason, various packaging structures have been introduced, such as multichip modules, package on package, package in package, and eventually three-dimensional (3-D)-chip stacks [3]?[6]. All of these approaches require increased input/output (I/O) counts, resulting in fine-pitch assembly [7], [8]. Therefore, the most critical issue in current electronic packaging is how to assemble fine-pitch components while avoiding an electrical short circuit in the x?y direction [8]?[12]. Much research has been done on fine-pitch interconnecting technology using microsolder balls smaller than 200 nm, but the problems of solder-ball handling and low yield remain [13]?[16]. In addition, there have been few reports so far about the fine-pitch interconnection below 25-nm pitch using microsolder balls. Three-dimensional-chip stacks require an additional microsolder and copper hybrid bumping and patterning processes on through silicon via (TSV), which increases the processing cost [7], [12], [17].
Publisher
Institute of Electrical and Electronics Engineers
Issue Date
2013
Language
English
Citation

IEEE NANOTECHNOLOGY MAGAZINE, v.7, no.1, pp.24 - 30

ISSN
1932-4310
DOI
10.1109/MNANO.2012.2237339
URI
http://hdl.handle.net/10203/189526
Appears in Collection
MS-Journal Papers(저널논문)
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