Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel

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4F(2) multifunctional unified-RAM based on a highly scaled vertical channel is experimentally demonstrated. The high performance and reliable operation of bandgap-engineered nonvolatile memory as well as underlap 1T-DRAM with nonuniform channel doping for a long retention time and endurable operation is presented in a single transistor.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2014-01
Language
English
Article Type
Article
Keywords

MOSFETS; URAM; DRAM; CELL; NVM

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.60 - 65

ISSN
0018-9383
DOI
10.1109/TED.2013.2292316
URI
http://hdl.handle.net/10203/189234
Appears in Collection
EE-Journal Papers(저널논문)
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