Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel
4F(2) multifunctional unified-RAM based on a highly scaled vertical channel is experimentally demonstrated. The high performance and reliable operation of bandgap-engineered nonvolatile memory as well as underlap 1T-DRAM with nonuniform channel doping for a long retention time and endurable operation is presented in a single transistor.
- Issue Date
- 2014-01
- Language
- English
- Article Type
- Article
- Keywords
MOSFETS; URAM; DRAM; CELL; NVM
- Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.60 - 65
- ISSN
- 0018-9383
- Appears in Collection
- EE-Journal Papers(저널논문)
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