Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Moon, Dong-Il | ko |
| dc.contributor.author | Kim, Jee Yeon | ko |
| dc.contributor.author | Moon, Joon-Bae | ko |
| dc.contributor.author | Kim, Dong-Oh | ko |
| dc.contributor.author | Choi, Yang-Kyu | ko |
| dc.date.accessioned | 2014-09-01T07:20:56Z | - |
| dc.date.available | 2014-09-01T07:20:56Z | - |
| dc.date.created | 2014-03-12 | - |
| dc.date.created | 2014-03-12 | - |
| dc.date.issued | 2014-01 | - |
| dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.60 - 65 | - |
| dc.identifier.issn | 0018-9383 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/189234 | - |
| dc.description.abstract | 4F(2) multifunctional unified-RAM based on a highly scaled vertical channel is experimentally demonstrated. The high performance and reliable operation of bandgap-engineered nonvolatile memory as well as underlap 1T-DRAM with nonuniform channel doping for a long retention time and endurable operation is presented in a single transistor. | - |
| dc.language | English | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.subject | MOSFETS | - |
| dc.subject | URAM | - |
| dc.subject | DRAM | - |
| dc.subject | CELL | - |
| dc.subject | NVM | - |
| dc.title | Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000330619100010 | - |
| dc.identifier.scopusid | 2-s2.0-84891555477 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 61 | - |
| dc.citation.issue | 1 | - |
| dc.citation.beginningpage | 60 | - |
| dc.citation.endingpage | 65 | - |
| dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
| dc.identifier.doi | 10.1109/TED.2013.2292316 | - |
| dc.contributor.localauthor | Choi, Yang-Kyu | - |
| dc.contributor.nonIdAuthor | Moon, Joon-Bae | - |
| dc.contributor.nonIdAuthor | Kim, Dong-Oh | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | Bandgap engineering | - |
| dc.subject.keywordAuthor | capacitorless 1T-DRAM | - |
| dc.subject.keywordAuthor | multifunction | - |
| dc.subject.keywordAuthor | nonvolatile memory | - |
| dc.subject.keywordAuthor | SONOS | - |
| dc.subject.keywordAuthor | unified-RAM (URAM) | - |
| dc.subject.keywordAuthor | vertical channel | - |
| dc.subject.keywordPlus | MOSFETS | - |
| dc.subject.keywordPlus | URAM | - |
| dc.subject.keywordPlus | DRAM | - |
| dc.subject.keywordPlus | CELL | - |
| dc.subject.keywordPlus | NVM | - |
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