Palladium nanoparticle decorated silicon nanowire field-effect transistor with side-gates for hydrogen gas detection

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dc.contributor.authorAhn, Jae-Hyukko
dc.contributor.authorYun, Jeonghoonko
dc.contributor.authorChoi, Yang-Kyuko
dc.contributor.authorPark, Inkyuko
dc.date.accessioned2014-08-27T01:22:21Z-
dc.date.available2014-08-27T01:22:21Z-
dc.date.created2014-01-15-
dc.date.created2014-01-15-
dc.date.created2014-01-15-
dc.date.issued2014-01-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.104, no.1-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/187336-
dc.description.abstractA silicon nanowire field-effect transistor (SiNW FET) with local side-gates and Pd surface decoration is demonstrated for hydrogen (H-2) detection. The SiNW FETs are fabricated by top-down method and functionalized with palladium nanoparticles (PdNPs) through electron beam evaporation for H-2 detection. The drain current of the PdNP-decorated device reversibly responds to H-2 at different concentrations. The local side-gates allow individual addressing of each sensor and enhance the sensitivity by adjusting the working region to the subthreshold regime. A control experiment using a non-functionalized device verifies that the hydrogen-sensitivity is originated from the PdNPs functionalized on the SiNW surface. (C) 2014 AIP Publishing LLC.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titlePalladium nanoparticle decorated silicon nanowire field-effect transistor with side-gates for hydrogen gas detection-
dc.typeArticle-
dc.identifier.wosid000329838800095-
dc.identifier.scopusid2-s2.0-84892143115-
dc.type.rimsART-
dc.citation.volume104-
dc.citation.issue1-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.4861228-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.localauthorPark, Inkyu-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSENSORS-
dc.subject.keywordPlusNANOTUBES-
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