Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Subject SUPERLATTICES
Showing results 1 to 15 of 15
| A study of the oxidation behavior and the postannealing effect in a graded SiGe/Si heterostructure Lim, YS; Jeong, JS; Lee, JeongYong; Kim, HS; Shon, HK; Kim, HK; Moon, DW, JOURNAL OF ELECTRONIC MATERIALS, v.31, no.5, pp.529 - 534, 2002-05 |
| A theoretical study of a spin polarized transport and giant magnetoresistance: The effect of the number of layers in a magnetic multilayer Noh, Eun Sun; Lee, HyuckMo; Lee, Seung-Cheol; Ulloa, Sergio E., JOURNAL OF APPLIED PHYSICS, v.103, no.8, pp.083903-1 - 083903-8, 2008-04 |
| Codoping characteristics of Zn with Mg in GaN Kim, KS; Han, MS; Yang, GM; Youn, CJ; Lee, HJ; Cho, HK; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.77, no.8, pp.1123 - 1125, 2000-08 |
| CuAu-I-type ordered structures in InxAl1-xAs epilayers grown on (001) InP substrates Lee, HS; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.82, pp.2999 - 3001, 2003-05 |
| Existence and atomic arrangement of the CuPt-type ordered structure near the ZnTe/GaAs heterointerface due to residual impurities Lee, HS; Lee, JeongYong; Kim, TW; Lee, DU; Choo, DC; Park, HL, JOURNAL OF APPLIED PHYSICS, v.90, no.8, pp.4027 - 4031, 2001-10 |
| Initiation and evolution of phase separation in heteroepitaxial InAlAs films Shin, Byungha; Lin, A; Lappo, K; Goldman, RS; Hanna, MC; Francoeur, S; Norman, AG; et al, APPLIED PHYSICS LETTERS, v.80, no.18, pp.3292 - 3294, 2002-05 |
| Interface effect on dielectric constant of HfO2/Al 2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition Park, Pan Kwi; Cha, Eun-Soo; Kang, Sang-Won, APPLIED PHYSICS LETTERS, v.90, no.23, pp.232906, 2007-06 |
| Magnetotransport, magneto-optical, and electronic subband studies in InxGa1-xAs/InyAl1-xAs modulation-doped strained double quantum wells Kim, TW; Jung, M; Lee, DU; Kim, JH; Yoo, KH; Lee, JeongYong; Ryu, SY, JOURNAL OF APPLIED PHYSICS, v.82, pp.4388 - 4393, 1997-12 |
| Metal Nanoparticle Array as a Tunable Refractive Index Material over Broad Visible and Infrared Wavelengths Kim, Reehyang; Chung, Kyungjae; Kim, Ju Young; Nam, Yunyong; Park, Sang-Hee Ko; Shin, Jonghwa, ACS PHOTONICS, v.5, no.4, pp.1188 - 1195, 2018-04 |
| MICROSTRUCTURAL DEGRADATION DURING ZN DIFFUSION IN A GAINASP/INP HETEROSTRUCTURE - LAYER MIXING, MISFIT DISLOCATION GENERATION, AND ZN3P2 PRECIPITATION Park, HyoHoon; LEE, KH; Lee, JeongYong; LEE, YT; LEE, EH; LEE, JY; HONG, SK; et al, JOURNAL OF APPLIED PHYSICS, v.72, no.9, pp.4063 - 4072, 1992-11 |
| Observation of V-shaped defects in the growth of In0.8Al0.2Sb/InSb layers: Temperature and V/III flux ratio dependences Kim, Y. H.; Lee, JeongYong; Noh, Y. G.; Kim, M. D.; Kwon, Y. J.; Oh, J. E., JOURNAL OF CRYSTAL GROWTH, v.296, no.1, pp.75 - 80, 2006-10 |
| Strain effects in CdxZn1-xTe/ZnTe double quantum-wells Kim, TW; Lee, DU; Cho, J; Lim, YS; Lee, JeongYong; Park, HL, JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, v.60, no.7, pp.857 - 860, 1999-07 |
| Strain-induced diffusion in a strained Si1-xGex/Si heterostructure Lim, YS; Lee, JeongYong; Kim, HS; Moon, DW, APPLIED PHYSICS LETTERS, v.77, no.25, pp.4157 - 4159, 2000-12 |
| THE EFFECT OF IN-SITU BORON DOPING ON THE STRAIN RELAXATION OF SI0.8GE0.2-B/SI HETEROSTRUCTURE GROWN BY MOLECULAR-BEAM EPITAXY LEE, SC; YUN, SJ; Lee, JeongYong, JOURNAL OF CRYSTAL GROWTH, v.150, no.1-4, pp.999 - 1004, 1995-05 |
| Tunable Catalytic Alloying Eliminates Stacking Faults in Compound Semiconductor Nanowires Heo, Ho-Seok; Kang, Ki-Bum; Lee, Dong-Hun; Jin, Li-Hua; Back, Hyeon-Jun; Hwang, In-Chan; Kim, Mi-Seong; et al, NANO LETTERS, v.12, no.2, pp.855 - 860, 2012-02 |
Discover
Open Access
Date issued
- 2,031 2020 - 2024
- 6,675 2010 - 2019
- 5,357 2000 - 2009
- 3,582 1990 - 1999
- 982 1980 - 1989