Interface effect on dielectric constant of HfO2/Al 2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition

The effect of the interface between Al2O3 and HfO2 sublayers on the dielectric constant was investigated in HfO2/Al2O3 nanolaminate films deposited using plasma-enhanced atomic layer deposition. After annealing at 700 degrees C, the dielectric constants of the nanolaminate films with a sublayer thickness of 40 A or greater were the same as the calculated values for a series of capacitors consisting of amorphous Al2O3 and monoclinic or tetragonal HfO2. As the sublayer thickness was reduced to 10 A, the dielectric constant increased up to 17.7 because a thin Hf-O-Al mixture layer, of which the number increases drastically in the nanolaminate films with thin sublayers, is formed at the interface. (c) 2007 American Institute of Physics.
Publisher
Amer Inst Physics
Issue Date
2007-06
Language
ENG
Keywords

HFO2 FILMS; THIN-FILMS; SILICON; SUPERLATTICES; GROWTH

Citation

APPLIED PHYSICS LETTERS, v.90, no.23, pp.232906 -

ISSN
0003-6951
DOI
10.1063/1.2746416
URI
http://hdl.handle.net/10203/1278
Appears in Collection
MS-Journal Papers(저널논문)
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