Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Subject GAAS
Showing results 1 to 46 of 46
| An electron microscopy study on the formation mechanism of hillocks on the (100)CdTe/GaAs Kim, YK; Lee, JeongYong; Kim, HS; Song, JH; Suh, SH, JOURNAL OF CRYSTAL GROWTH, v.192, no.1-2, pp.109 - 116, 1998-08 |
| COMPOSITIONAL DISORDERING IN AL0.3GA0.7AS/GAAS SUPERLATTICES BY THERMAL-TREATMENT KIM, SK; KANG, TW; HONG, CY; KIM, TW; Lee, JeongYong, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.143, no.1, pp.23 - 27, 1994-05 |
| Correlation between the ordered structure and the valence-band splitting in highly strained CdxZn1-xTe epilayers Kim, TW; Kwack, KD; Park, JG; Lee, HS; Lee, JeongYong; Jang, MS; Park, HL, APPLIED PHYSICS LETTERS, v.83, pp.269 - 271, 2003-07 |
| Crystal structures of two variants for CuPtB-type ordering in strained CdxZn1-xTe epilayers Lee, HS; Lee, JeongYong; Kim, TW; Kwack, KD; Park, JG; Park, HL, SOLID STATE COMMUNICATIONS, v.127, pp.39 - 41, 2003-06 |
| CuPt-type ordering and ordered domains in CdxZn1-xTe epilayers grown on ZnTe buffer layers Lee, HS; Lee, JeongYong; Choo, DC; Kim, TW; Park, HL, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.S412 - S415, 2003-02 |
| Dependence of the InAs size distribution on the growth times for vertically stacked InAs/GaAs quantum dots Lee, HS; Lee, JeongYong; Lee, DU; Choo, DC; Kim, TW; Kim, MD, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, pp.483 - 486, 2002-10 |
| Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots Lee, HS; Lee, JeongYong; Kim, TW; Choo, DC; Kim, MD; Seo, SY; Shin, JungHoon, JOURNAL OF CRYSTAL GROWTH, v.241, no.1-2, pp.63 - 68, 2002-05 |
| Effect of thermal annealing on the microstructural and optical properties of vertically stacked InAs/GaAs quantum dots embedded in modulation-doped heterostructures Lee, HS; Lee, JeongYong; Kim, TW; Kim, MD, JOURNAL OF APPLIED PHYSICS, v.94, pp.6354 - 6357, 2003-11 |
| Effect of two-step growth on the heteroepitaxial growth of InSb thin film on Si (001) substrate: A transmission electron microscopy study Kim, YH; Lee, JeongYong; Noh, YG; Kim, MD; Kwon, YJ; Oh, JE; Gronsky, R, APPLIED PHYSICS LETTERS, v.89, pp.A38 - A38, 2006-07 |
| Effects of growth interruption on the evolution of InAs/InP self-assembled quantum dots Yoon, S; Moon, Y; Lee, TW; Hwang, H; Yoon, E; Kim, YD; Lee, UH; et al, JOURNAL OF ELECTRONIC MATERIALS, v.29, no.5, pp.535 - 541, 2000-05 |
| Effects of growth temperature and surface treatment on growth orientation and interface structure during molecular beam epitaxy of CdTe on (0 0 1)GaAs Kwon, MS; Lee, JeongYong; Kim, MD; Kang, TW, JOURNAL OF CRYSTAL GROWTH, v.186, no.1-2, pp.79 - 84, 1998-03 |
| Effects of two-dimensional electron gas on the optical properties of InAs/GaAs quantum dots in modulation-doped heterostructures Kim, TW; Kim, JH; Lee, HS; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.86, pp.353 - 355, 2005-01 |
| Existence and atomic arrangement of microtwins in CdTe epilayers grown on GaAs (211) B substrates Kim, TW; Lee, HS; Lee, JeongYong; Ryu, YS; Kang, TW, SOLID STATE COMMUNICATIONS, v.129, pp.515 - 518, 2004-02 |
| Existence and atomic arrangement of microtwins in hexagonal MnAs ferromagnetic epilayers grown on GaAs (100) substrates with monolayer InAs Buffers Lee, HS; Yi, S; Kim, TW; Lee, DU; Jeon, HC; Kang, TW; Lee, KH; et al, APPLIED PHYSICS LETTERS, v.87, pp.985 - 992, 2005-08 |
| Existence and atomic arrangement of the CuPt-type ordered structure near the ZnTe/GaAs heterointerface due to residual impurities Lee, HS; Lee, JeongYong; Kim, TW; Lee, DU; Choo, DC; Park, HL, JOURNAL OF APPLIED PHYSICS, v.90, no.8, pp.4027 - 4031, 2001-10 |
| Formation mechanisms of ZnO amorphous layers due to thermal treatment of ZnO thin films grown on p-InP (100) substrates Yuk, Jong Min; Lee, Jeong-Yong; No, Y. S.; Kim, T. W.; Choi, W. K., JOURNAL OF APPLIED PHYSICS, v.103, no.8, 2008-04 |
| Formation of CuPt-type ordered (Cd, Zn)Te at CdTe/ZnTe interface Kwon, MS; Lee, JeongYong, JOURNAL OF CRYSTAL GROWTH, v.191, no.1-2, pp.51 - 58, 1998-07 |
| Growth mode and structural characterization of GaSb on Si (001) substrate: A transmission electron microscopy study Kim, YH; Lee, JeongYong; Noh, YG; Kim, MD; Cho, SM; Kwon, YJ; Oh, JE, APPLIED PHYSICS LETTERS, v.88, pp.380 - 388, 2006-06 |
| HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY OF THE COGA/GAAS HETEROSTRUCTURE GROWN BY MOLECULAR-BEAM EPITAXY WOO, YD; KANG, TW; KIM, TW; Lee, JeongYong; KUO, TC; WANG, KL, SOLID STATE COMMUNICATIONS, v.91, no.3, pp.219 - 221, 1994-07 |
| In-situ laser reflectometry method for wet-etch endpoint detection of VCSEL structure Cho, HK; Lee, JeongYong; Lee, B; Baek, JH; Han, WS, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, pp.1076 - 1079, 1999-12 |
| InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on V-grooved InGaAs/GaAs substrates Lee, MS; Kim, EK; Kim, SI; Hwang, SM; Kim, CK; Min, SK; Lee, JeongYong, SOLID STATE COMMUNICATIONS, v.101, no.9, pp.705 - 708, 1997-03 |
| INTERFACIAL STAGES OF THE ZNTE/GAAS STRAINED HETEROSTRUCTURES GROWN BY TEMPERATURE-GRADIENT VAPOR TRANSPORT DEPOSITION AT LOW-TEMPERATURE KIM, TW; PARK, HL; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.64, no.19, pp.2526 - 2528, 1994-05 |
| INVESTIGATION OF ELECTRICAL-PROPERTIES AND STABILITY OF SCHOTTKY CONTACTS ON (NH4)(2)S-X-TREATED N-TYPE AND P-TYPE IN0.5GA0.5P KWON, SD; KWON, HK; CHOE, BD; LIM, H; Lee, JeongYong, JOURNAL OF APPLIED PHYSICS, v.78, no.4, pp.2482 - 2488, 1995-08 |
| Luminescence of bound excitons in epitaxial ZnO thin films grown by plasma-assisted molecular beam epitaxy Jung, Yeon Sik; Choi, WK; Kononenko, OV; Panin, GN, JOURNAL OF APPLIED PHYSICS, v.99, no.1, pp.365 - 370, 2006-01 |
| Microstructural and interband transition properties of vertically stacked InAs/GaAs self-assembled quantum dots embedded in modulation-doped heterostructures Kim, TW; Lee, DU; Choo, DC; Kim, HJ; Lee, HS; Lee, JeongYong; Kim, MD, APPLIED PHYSICS LETTERS, v.79, no.1, pp.33 - 35, 2001-07 |
| Microstructural and optical properties of InAs/GaAs quantum dots embedded in modulation-doped AlxGa1-xAs/GaAs heterostructures Lee, HS; Lee, JeongYong; Kim, TW; Lee, DU; Choo, DC; Jung, M; Kim, MD, JOURNAL OF APPLIED PHYSICS, v.91, no.8, pp.5195 - 5199, 2002-04 |
| MICROSTRUCTURAL DEGRADATION DURING ZN DIFFUSION IN A GAINASP/INP HETEROSTRUCTURE - LAYER MIXING, MISFIT DISLOCATION GENERATION, AND ZN3P2 PRECIPITATION Park, HyoHoon; LEE, KH; Lee, JeongYong; LEE, YT; LEE, EH; LEE, JY; HONG, SK; et al, JOURNAL OF APPLIED PHYSICS, v.72, no.9, pp.4063 - 4072, 1992-11 |
| Microstructural evidence on direct contact of Au/Ge/Ni/Au ohmic metals to InGaAs channel in pseudomorphic high electron mobility transistor with undoped cap layer Lee, JL; Kim, YT; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.73, no.12, pp.1670 - 1672, 1998-09 |
| On the phase shift of reflection high energy electron diffraction intensity oscillations during Ge(001) homoepitaxy by molecular beam epitaxy Shin, Byungha; Leonard, John P.; McCamy, James W.; Aziz, Michael J., JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.25, no.2, pp.221 - 224, 2007 |
| OPTICAL-DETECTION OF ELECTRON-NUCLEAR DOUBLE-RESONANCE FOR AN S = 1 LUMINESCENT CENTER IN GAP-O DONEGAN, JF; Jeon, DukYoung; WATKINS, GD, PHYSICAL REVIEW B, v.43, no.3, pp.2141 - 2151, 1991-01 |
| OPTICAL-DETECTION OF MAGNETIC-RESONANCE OF THE ZINC VACANCY IN ZNSE VIA MAGNETIC CIRCULAR-DICHROISM Jeon, DukYoung; GISLASON, HP; WATKINS, GD, PHYSICAL REVIEW B, v.48, no.11, pp.7872 - 7883, 1993-09 |
| Polarization properties of vertical-cavity surface-emitting lasers with various patterns in tilted pillar structures Park, MS; Ahn, Byung Tae; Chu, HY; Yoo, BS; Park, HH, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.37, no.12A, pp.6295 - 6300, 1998-12 |
| Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In(0.2)Ga(0.8)As and deposition of ultrathin Al(2)O(3) gate insulators Shin, Byungha; Choi, Donghun; Harris, James S.; Mclntyre, Paul C., APPLIED PHYSICS LETTERS, v.93, no.5, 2008-08 |
| Reaction mechanism of low-temperature Cu dry etching using an inductively coupled Cl-2/N-2 plasma with ultraviolet light irradiation Kwon, MS; Lee, JeongYong, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.146, no.8, pp.3119 - 3123, 1999-08 |
| Relationship between Cu2ZnSnS4 quasi donor-acceptor pair density and solar cell efficiency Gershon, Talia; Shin, Byungha; Gokmen, Tayfun; Lu, Siyuan; Bojarczuk, Nestor; Guha, Supratik, APPLIED PHYSICS LETTERS, v.103, no.19, 2013-11 |
| Role of insertion layer controlling wavelength in InGaAs quantum dots Park, SK; Park, YJ; Kim, EK; Park, CJ; Cho, HY; Lim, YS; Lee, JeongYong; et al, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.41, pp.4378 - 4381, 2002-06 |
| Shapes of InAs quantum dots on InGaAs/InP Hwang, H; Yoon, S; Kwon, H; Yoon, E; Kim, HS; Lee, JeongYong; Cho, B, APPLIED PHYSICS LETTERS, v.85, pp.6383 - 6385, 2004-12 |
| Simultaneous existence and atomic arrangement of CuPt-type and CuAu-I type ordered structures near ZnTe/ZnSe heterointerfaces Lee, HS; Lee, JeongYong; Kim, TW; Lee, DU; Choo, DC; Kim, MD, JOURNAL OF APPLIED PHYSICS, v.91, no.9, pp.5657 - 5660, 2002-05 |
| Strain effect and atomic arrangement studies in ZnTe/GaAs lattice-mismatched heterostructures Lee, HS; Choi, JH; Lee, JeongYong; Lee, JH; Lee, DU; Kim, TW; Park, HL, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.37, no.6, pp.1017 - 1020, 2000-12 |
| Strain effects and atomic arrangements of 60 degrees and 90 degrees dislocations near the ZnTe/GaAs heterointerface Kim, TW; Lee, DU; Lee, HS; Lee, JeongYong; Park, HL, APPLIED PHYSICS LETTERS, v.78, no.10, pp.1409 - 1411, 2001-03 |
| STRUCTURAL AND ELECTRICAL-PROPERTIES OF A STRAINED INSB/GAAS HETEROSTRUCTURE KIM, TW; YOO, BS; MCKEE, MA; Lee, JeongYong, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.142, no.1, pp.23 - 27, 1994-03 |
| STRUCTURAL AND OPTICAL-PROPERTIES OF A STRAINED CDTE/GAAS HETEROSTRUCTURE GROWN BY TEMPERATURE-GRADIENT VAPOR TRANSPORT DEPOSITION AT LOW-TEMPERATURE KIM, TW; PARK, HL; Lee, JeongYong, THIN SOLID FILMS, v.259, no.2, pp.253 - 258, 1995-04 |
| STRUCTURAL, ELECTRICAL AND OPTICAL-PROPERTIES OF SI DELTA-DOPED AL0.27GA0.73AS/GAAS SINGLE QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION KIM, TW; KIM, Y; MIN, SK; Lee, JeongYong; LEE, SJ, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.9, no.10, pp.1823 - 1826, 1994-10 |
| Surface morphology of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium Park, SJ; Ro, JR; Ha, JS; Kim, SB; Park, HyoHoon; Lee, EH; Yi, JY; et al, SURFACE SCIENCE, v.350, no.1-3, pp.221 - 228, 1996-04 |
| The strain relaxation in a lattice-mismatched heterostructure Lim, YS; Lee, JeongYong; Kim, TW, JOURNAL OF CRYSTAL GROWTH, v.200, no.3-4, pp.421 - 426, 1999-04 |
| Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001) Shin, Byungha; Cagnon, Joel; Long, Rathnait D.; Hurley, Paul K.; Stemmer, Susanne; McIntyre, Paul C., ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.8, pp.40 - 43, 2009 |
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