STRUCTURAL AND ELECTRICAL-PROPERTIES OF A STRAINED INSB/GAAS HETEROSTRUCTURE

Publisher
AKADEMIE VERLAG GMBH
Issue Date
1994-03
Language
ENG
Keywords

MOLECULAR-BEAM EPITAXY; CHEMICAL VAPOR-DEPOSITION; INSB; GROWTH; GAAS; INAS1-XSBX; SCATTERING; TRANSPORT; FILMS

Citation

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.142, no.1, pp.23 - 27

ISSN
0031-8965
URI
http://hdl.handle.net/10203/65330
Appears in Collection
MS-Journal Papers(저널논문)
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