Fabrication and characterization of broad-band light emitting In-rich InGaN/GaN quantum well structures formed on GaN nano-pyramids

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dc.contributor.authorKo, Young-Ho-
dc.contributor.authorKim, Taek-
dc.contributor.authorKwon, Bong-Joon-
dc.contributor.authorCho, Yong-Hoon-
dc.date.accessioned2013-03-29T14:56:23Z-
dc.date.available2013-03-29T14:56:23Z-
dc.date.created2012-08-13-
dc.date.issued2010-07-25-
dc.identifier.citationThe 30th International Conference on the Physics of Semiconductors (ICPS 2010), v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/171544-
dc.languageENG-
dc.publisherThe 30th International Conference on the Physics of Semiconductors (ICPS 2010)-
dc.titleFabrication and characterization of broad-band light emitting In-rich InGaN/GaN quantum well structures formed on GaN nano-pyramids-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameThe 30th International Conference on the Physics of Semiconductors (ICPS 2010)-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorCho, Yong-Hoon-
dc.contributor.nonIdAuthorKo, Young-Ho-
dc.contributor.nonIdAuthorKim, Taek-
dc.contributor.nonIdAuthorKwon, Bong-Joon-
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PH-Conference Papers(학술회의논문)
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