DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ko, Young-Ho | - |
dc.contributor.author | Kim, Taek | - |
dc.contributor.author | Kwon, Bong-Joon | - |
dc.contributor.author | Cho, Yong-Hoon | - |
dc.date.accessioned | 2013-03-29T14:56:23Z | - |
dc.date.available | 2013-03-29T14:56:23Z | - |
dc.date.created | 2012-08-13 | - |
dc.date.issued | 2010-07-25 | - |
dc.identifier.citation | The 30th International Conference on the Physics of Semiconductors (ICPS 2010), v., no., pp. - | - |
dc.identifier.uri | http://hdl.handle.net/10203/171544 | - |
dc.language | ENG | - |
dc.publisher | The 30th International Conference on the Physics of Semiconductors (ICPS 2010) | - |
dc.title | Fabrication and characterization of broad-band light emitting In-rich InGaN/GaN quantum well structures formed on GaN nano-pyramids | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | The 30th International Conference on the Physics of Semiconductors (ICPS 2010) | - |
dc.identifier.conferencecountry | South Korea | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Ko, Young-Ho | - |
dc.contributor.nonIdAuthor | Kim, Taek | - |
dc.contributor.nonIdAuthor | Kwon, Bong-Joon | - |
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