Fabrication of Graphene-Quantum dot photosensitive hybrid films

Abstract

Graphene-Quantum dot (G-QD) composites for transparent and optoelectronic films were fabricated via hybridization between Graphene made by Chemical Vapor Deposition(CVD) method and amine functionalized CdSe/ZnS QDs. The pyrene acts as a linker between Graphene and QD and facilitates efficient electron transfer. Here, we examined the effect of the conductivity of graphene on the photosensitivity of transparent optoelectronic G-QD films from Layer-by-Layer (LBL) techniques. The G-QD hybrid films were characterized by using optical absorption, photoluminescence, 4-point probe and digital multimeter measurements. The scanning electron microscope (SEM), the high-resolution transmission electron microscope (HRTEM) were used to observe surface morphologies of G-QD films.