O-vacancy in amorphous indium-gallium-zinc oxide thin film transistors: origin of negative bias illumination stress instability

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dc.contributor.authorNoh, H.-K.-
dc.contributor.authorRyu, B.-
dc.contributor.authorChoi, E.-A.-
dc.contributor.authorChang, Kee-Joo-
dc.date.accessioned2013-03-29T07:08:34Z-
dc.date.available2013-03-29T07:08:34Z-
dc.date.created2012-04-06-
dc.date.issued2011-02-
dc.identifier.citation한국반도체학술대회, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/168627-
dc.languageENG-
dc.publisher한국반도체학회-
dc.titleO-vacancy in amorphous indium-gallium-zinc oxide thin film transistors: origin of negative bias illumination stress instability-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationname한국반도체학술대회-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthorNoh, H.-K.-
dc.contributor.nonIdAuthorRyu, B.-
dc.contributor.nonIdAuthorChoi, E.-A.-
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PH-Conference Papers(학술회의논문)
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