A nonquasi-static table-based small-signal model of heterojunction bipolar transistor

A nonquasi-static table-based (NQS-TB) small-signal model, which has been used successfully in modeling FETs, is applied to a heterojunction bipolar transistor (HBT). The capacitive couplings associated with base cause the conventional model to be invalid at high frequencies. To take these effects into account, a new model is proposed that is compatible with a small-signal T-model topology. We demonstrate good agreement between the measured and simulated S-parameters over the range of 1similar to40 GHz.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2002-10
Language
ENG
Keywords

PARAMETER-EXTRACTION; CIRCUIT SIMULATION; EQUIVALENT-CIRCUIT; FET MODEL; MOSFET; HBT

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.49, no.10, pp.1681 - 1686

ISSN
0018-9383
DOI
10.1109/TED.2002.802648
URI
http://hdl.handle.net/10203/1474
Appears in Collection
EE-Journal Papers(저널논문)
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