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A nonquasi-static table-based small-signal model of heterojunction bipolar transistor

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dc.contributor.authorKo, Sangsooko
dc.contributor.authorKoh, Kyungminko
dc.contributor.authorPark, Hyun-Minko
dc.contributor.authorHong, Songcheolko
dc.date.accessioned2007-09-18T09:34:53Z-
dc.date.available2007-09-18T09:34:53Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2002-10-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.49, no.10, pp.1681 - 1686-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/1474-
dc.description.abstractA nonquasi-static table-based (NQS-TB) small-signal model, which has been used successfully in modeling FETs, is applied to a heterojunction bipolar transistor (HBT). The capacitive couplings associated with base cause the conventional model to be invalid at high frequencies. To take these effects into account, a new model is proposed that is compatible with a small-signal T-model topology. We demonstrate good agreement between the measured and simulated S-parameters over the range of 1similar to40 GHz.-
dc.description.sponsorshipThis work was supported in part by KOSEF under the ERC Program through the MINT Research Center, Dongguk University, Seoul, Korea, and from the Intelligent Microsystem Center, which carries out one of the 21st Century’s Frontier Research and Development Projects sponsored by the Korea Ministry Of Science and Technology.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectPARAMETER-EXTRACTION-
dc.subjectCIRCUIT SIMULATION-
dc.subjectEQUIVALENT-CIRCUIT-
dc.subjectFET MODEL-
dc.subjectMOSFET-
dc.subjectHBT-
dc.titleA nonquasi-static table-based small-signal model of heterojunction bipolar transistor-
dc.typeArticle-
dc.identifier.wosid000178420500001-
dc.identifier.scopusid2-s2.0-0036772171-
dc.type.rimsART-
dc.citation.volume49-
dc.citation.issue10-
dc.citation.beginningpage1681-
dc.citation.endingpage1686-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/TED.2002.802648-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorHong, Songcheol-
dc.contributor.nonIdAuthorKo, Sangsoo-
dc.contributor.nonIdAuthorKoh, Kyungmin-
dc.contributor.nonIdAuthorPark, Hyun-Min-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorcharge-based model-
dc.subject.keywordAuthorheterojunction bipolar transistor (HBT)-
dc.subject.keywordAuthornonquasi-static-
dc.subject.keywordAuthorsmall signal model-
dc.subject.keywordAuthortable-based model-
dc.subject.keywordPlusPARAMETER-EXTRACTION-
dc.subject.keywordPlusCIRCUIT SIMULATION-
dc.subject.keywordPlusEQUIVALENT-CIRCUIT-
dc.subject.keywordPlusFET MODEL-
dc.subject.keywordPlusMOSFET-
dc.subject.keywordPlusHBT-
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