Fabrication and characterization of MFISFET using Al2O3 insulating layer for non-volatile memory

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Issue Date
2000-03-12
Language
ENG
Citation

12th International Symposium on Integrated Ferroelectrics, v.34, no.40547

ISSN
1058-4587
URI
http://hdl.handle.net/10203/126794
Appears in Collection
EE-Conference Papers(학술회의논문)
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