DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, C.H. | - |
dc.contributor.author | Cha, S.Y. | - |
dc.contributor.author | Lee, Hee Chul | - |
dc.contributor.author | Lee, W.-J. | - |
dc.contributor.author | Yu, B.-G. | - |
dc.contributor.author | Kwak, D.-H. | - |
dc.date.accessioned | 2013-03-16T03:06:10Z | - |
dc.date.available | 2013-03-16T03:06:10Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-03-12 | - |
dc.identifier.citation | 12th International Symposium on Integrated Ferroelectrics, v.34, no.40547, pp. - | - |
dc.identifier.issn | 1058-4587 | - |
dc.identifier.uri | http://hdl.handle.net/10203/126794 | - |
dc.language | ENG | - |
dc.title | Fabrication and characterization of MFISFET using Al2O3 insulating layer for non-volatile memory | - |
dc.type | Conference | - |
dc.identifier.scopusid | 2-s2.0-0035027082 | - |
dc.type.rims | CONF | - |
dc.citation.volume | 34 | - |
dc.citation.issue | 40547 | - |
dc.citation.publicationname | 12th International Symposium on Integrated Ferroelectrics | - |
dc.identifier.conferencecountry | Germany | - |
dc.identifier.conferencecountry | Germany | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
dc.contributor.nonIdAuthor | Shin, C.H. | - |
dc.contributor.nonIdAuthor | Cha, S.Y. | - |
dc.contributor.nonIdAuthor | Lee, W.-J. | - |
dc.contributor.nonIdAuthor | Yu, B.-G. | - |
dc.contributor.nonIdAuthor | Kwak, D.-H. | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.