Fabrication and characterization of MFISFET using Al2O3 insulating layer for non-volatile memory

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dc.contributor.authorShin, C.H.-
dc.contributor.authorCha, S.Y.-
dc.contributor.authorLee, Hee Chul-
dc.contributor.authorLee, W.-J.-
dc.contributor.authorYu, B.-G.-
dc.contributor.authorKwak, D.-H.-
dc.date.accessioned2013-03-16T03:06:10Z-
dc.date.available2013-03-16T03:06:10Z-
dc.date.created2012-02-06-
dc.date.issued2000-03-12-
dc.identifier.citation12th International Symposium on Integrated Ferroelectrics, v.34, no.40547, pp. --
dc.identifier.issn1058-4587-
dc.identifier.urihttp://hdl.handle.net/10203/126794-
dc.languageENG-
dc.titleFabrication and characterization of MFISFET using Al2O3 insulating layer for non-volatile memory-
dc.typeConference-
dc.identifier.scopusid2-s2.0-0035027082-
dc.type.rimsCONF-
dc.citation.volume34-
dc.citation.issue40547-
dc.citation.publicationname12th International Symposium on Integrated Ferroelectrics-
dc.identifier.conferencecountryGermany-
dc.identifier.conferencecountryGermany-
dc.contributor.localauthorLee, Hee Chul-
dc.contributor.nonIdAuthorShin, C.H.-
dc.contributor.nonIdAuthorCha, S.Y.-
dc.contributor.nonIdAuthorLee, W.-J.-
dc.contributor.nonIdAuthorYu, B.-G.-
dc.contributor.nonIdAuthorKwak, D.-H.-
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EE-Conference Papers(학술회의논문)
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