Photoluminescence due to the Hole Capturing of DX- Centers in $In_{0.32}Ga_{0.68}$P:(S, Se, Te)

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dc.contributor.author김재은-
dc.contributor.author박해용-
dc.date.accessioned2013-03-15T07:05:13Z-
dc.date.available2013-03-15T07:05:13Z-
dc.date.created2012-02-06-
dc.date.issued1997-
dc.identifier.citationKorean Conference on Semiconductors, v., no., pp.249 - 250-
dc.identifier.urihttp://hdl.handle.net/10203/117205-
dc.languageKOR-
dc.titlePhotoluminescence due to the Hole Capturing of DX- Centers in $In_{0.32}Ga_{0.68}$P:(S, Se, Te)-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage249-
dc.citation.endingpage250-
dc.citation.publicationnameKorean Conference on Semiconductors-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthor김재은-
dc.contributor.localauthor박해용-
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PH-Conference Papers(학술회의논문)
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