DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김재은 | - |
dc.contributor.author | 박해용 | - |
dc.date.accessioned | 2013-03-15T07:05:13Z | - |
dc.date.available | 2013-03-15T07:05:13Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997 | - |
dc.identifier.citation | Korean Conference on Semiconductors, v., no., pp.249 - 250 | - |
dc.identifier.uri | http://hdl.handle.net/10203/117205 | - |
dc.language | KOR | - |
dc.title | Photoluminescence due to the Hole Capturing of DX- Centers in $In_{0.32}Ga_{0.68}$P:(S, Se, Te) | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 249 | - |
dc.citation.endingpage | 250 | - |
dc.citation.publicationname | Korean Conference on Semiconductors | - |
dc.identifier.conferencecountry | South Korea | - |
dc.identifier.conferencecountry | South Korea | - |
dc.contributor.localauthor | 김재은 | - |
dc.contributor.localauthor | 박해용 | - |
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