Reconstructions and step structures on vicinal Si(001) surfaces by interaction with Bi

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dc.contributor.authorLee, YJko
dc.contributor.authorLee, SYko
dc.contributor.authorKim, Sehunko
dc.date.accessioned2009-09-21T07:22:22Z-
dc.date.available2009-09-21T07:22:22Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1999-03-
dc.identifier.citationJOURNAL OF PHYSICS-CONDENSED MATTER, v.11, no.8, pp.1953 - 1960-
dc.identifier.issn0953-8984-
dc.identifier.urihttp://hdl.handle.net/10203/11396-
dc.description.abstractReconstructions and step structures on vicinal Bi:Si(001) surfaces are studied under various substrate temperatures and Bi coverages. The observed reconstructions are (2x1), (2x2), c(4x4), and (2x7) phases. For step distributions, alternative domain configurations with single layer steps are observed. The population ratios of A terrace to B terrace depend on the substrate temperatures. The observed reconstructions and step distributions are explained by the large size of the Bi atom compared with Si, the anisotropic stress tensor, and the local atomic structure in the S-B step.-
dc.description.sponsorshipThis work was supported in part by the Center for Molecular Science at KAIST and the Korea Science and Engineering Foundation (KOSEF) (No. 95-0501-03-01-3).en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIOP PUBLISHING LTD-
dc.subjectSCANNING-TUNNELING-MICROSCOPY-
dc.subjectSI(100) SURFACE-
dc.subjectSTRAIN RELIEF-
dc.subjectSI EPITAXY-
dc.subjectADSORPTION-
dc.subjectREARRANGEMENT-
dc.subjectRESOLUTION-
dc.subjectSTRESS-
dc.subjectGE-
dc.titleReconstructions and step structures on vicinal Si(001) surfaces by interaction with Bi-
dc.typeArticle-
dc.identifier.wosid000079096800008-
dc.identifier.scopusid2-s2.0-0006897534-
dc.type.rimsART-
dc.citation.volume11-
dc.citation.issue8-
dc.citation.beginningpage1953-
dc.citation.endingpage1960-
dc.citation.publicationnameJOURNAL OF PHYSICS-CONDENSED MATTER-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKim, Sehun-
dc.contributor.nonIdAuthorLee, YJ-
dc.contributor.nonIdAuthorLee, SY-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSCANNING-TUNNELING-MICROSCOPY-
dc.subject.keywordPlusSI(100) SURFACE-
dc.subject.keywordPlusSTRAIN RELIEF-
dc.subject.keywordPlusSI EPITAXY-
dc.subject.keywordPlusADSORPTION-
dc.subject.keywordPlusREARRANGEMENT-
dc.subject.keywordPlusRESOLUTION-
dc.subject.keywordPlusSTRESS-
dc.subject.keywordPlusGE-
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